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AD7866 Datasheet(PDF) 4 Page - Analog Devices

Part # AD7866
Description  Dual 1 MSPS, 12-Bit, 2-Channel SAR ADC with Serial Interface
PDF  20 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

AD7866 Datasheet(HTML) 4 Page - Analog Devices

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REV. 0
AD7866
–4–
1.6V
200 AIOL
200 A
IOH
CL
50pF
TO
OUTPUT
PIN
Figure 1. Load Circuit for Digital Output
Timing Specifications
WARNING!
ESD SENSITIVE DEVICE
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD7866 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS
1
(TA = 25
oC unless otherwise noted)
AVDD to AGND . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
DVDD to DGND . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
VDRIVE to DGND . . . . . . . . . . . . . . . –0.3 V to DVDD + 0.3 V
VDRIVE to AGND . . . . . . . . . . . . . . . . –0.3 V to AVDD + 0.3 V
AVDD to DVDD . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +0.3 V
AGND to DGND . . . . . . . . . . . . . . . . . . . . –0.3 V to +0.3 V
Analog Input Voltage to AGND . . . . –0.3 V to AVDD + 0.3 V
Digital Input Voltage to DGND . . . . . . . . . . . –0.3 V to +7 V
VREF to AGND . . . . . . . . . . . . . . . . . –0.3 V to AVDD + 0.3 V
Digital Output Voltage to DGND . . –0.3 V to VDRIVE + 0.3 V
Input Current to Any Pin Except Supplies
2 . . . . . . . .
±10 mA
Operating Temperature Range
Commercial (A, B Versions) . . . . . . . . . . . . . –40
oC to +85oC
Storage Temperature Range . . . . . . . . . . . . –65
oC to +150oC
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150
oC
TSSOP Package, Power Dissipation . . . . . . . . . . . . . 450 mW
JA Thermal Impedance . . . . . . . . . . . .
143
°C/W (TSSOP)
JC Thermal Impedance . . . . . . . . . . . . .
45
°C/W (TSSOP)
Lead Temperature, Soldering
Vapor Phase (60 secs) . . . . . . . . . . . . . . . . . . . . . . . 215
°C
Infrared (15 secs) . . . . . . . . . . . . . . . . . . . . . . . . . . 220
°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 kV
NOTES
1 Stresses above those listed under Absolute Maximum Ratings may cause permanent
damage to the device. This is a stress rating only; functional operation of the device
at these or any other conditions above those listed in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
2 Transient currents of up to 100 mA will not cause SCR latch up.
TIMING SPECIFICATIONS1 (V
DD = 2.7 V to 5.25 V, VDRIVE = 2.7 V to 5.25 V, VREF = 2.5 V; TA = TMIN to TMAX, unless otherwise noted.)
Limit at
Parameter
TMIN, TMAX
Unit
Description
fSCLK
2
10
kHz min
20
MHz max
tCONVERT
16
× t
SCLK
ns max
tSCLK = 1/fSCLK
800
ns max
fSCLK = 20 MHz
tQUIET
50
ns max
Minimum Time Between End of Serial Read and Next Falling Edge of
CS
t2
10
ns min
CS to SCLK Setup Time
t3
3
25
ns max
Delay from
CS Until D
OUTA and DOUTB Three-State Disabled
t4
3
40
ns max
Data Access Time After SCLK Falling Edge. VDRIVE
3 V, CL = 50 pF;
VDRIVE < 3 V, CL = 25 pF
t5
0.4 tSCLK
ns min
SCLK Low Pulsewidth
t6
0.4 tSCLK
ns min
SCLK High Pulsewidth
t7
10
ns min
SCLK to Data Valid Hold Time
t8
4
25
ns max
CS Rising Edge to D
OUTA, DOUTB, High Impedance
t9
4
10
ns min
SCLK Falling Edge to DOUTA, DOUTB, High Impedance
50
ns max
SCLK Falling Edge to DOUTA, DOUTB, High Impedance
NOTES
1Sample tested at 25
°C to ensure compliance. All input signals are specified with tr = tf = 5 ns (10% to 90% of V
DRIVE) and timed from a voltage level of 1.6 V.
2Mark/Space ratio for the CLK input is 40/60 to 60/40.
3Measured with the load circuit of Figure 1 and defined as the time required for the output to cross 0.8 V or 2.0 V.
4t
8, t9 are derived from the measured time taken by the data outputs to change 0.5 V when loaded with the circuit of Figure 1. The measured number is then extrapolated
back to remove the effects of charging or discharging the 50 pF capacitor. This means that the times t 8 and t9 quoted in the timing characteristics are the true bus
relinquish times of the part and are independent of the bus loading.
Specifications subject to change without notice.



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