TPS56921

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SLVSBL4 – OCTOBER 2012

THERMAL INFORMATION

TPS56921

UNITS

HTSSOP (20 PINS)

Junction-to-ambient thermal resistance

39.4

26

Junction-to-case (top) thermal resistance

26.5

Junction-to-board thermal resistance

23.1

°C/W

Junction-to-top characterization parameter

0.8

Junction-to-board characterization parameter

22.8

Junction-to-case (bottom) thermal resistance

2.1

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

(2)

distortion starts to substantially increase. Thermal management of the PCB should strive to keep the junction temperature at or below

125°C for best performance and long-term reliability. See power dissipation estimate in application section of this data sheet for more

information.

(3)

Test board conditions:

(a) 3 inches × 3 inches, 4 layers, thickness: 0.062 inch

(b) 2 oz. copper traces located on the top of the PCB

(c) 2 oz. copper ground planes on the 2 internal layers and bottom layer of the PCB

(d) 21 thermal vias located under the device package and 9 of them located under the device exposed thermal pad

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY VOLTAGE (VIN AND PVIN PINS)

PVIN operating input voltage

1.6

17

V

VIN operating input voltage

4.5

17

V

VIN internal UVLO threshold

VIN rising

4.0

4.5

V

VIN internal UVLO hysteresis

150

mV

VIN shutdown supply Current

EN = 0 V

2

7

μA

VIN operating – non switching supply current

VSENSE = 810 mV

770

1000

μA

ENABLE AND UVLO (EN PIN)

Enable threshold

Rising

1.21

1.26

V

Enable threshold

Falling

1.10

1.17

Input current

EN = 1.1 V

1.15

μA

Hysteresis current

EN = 1.3 V

3.3

μA

OUTPUT VOLTAGE

0 A

Voltage reference

Voltage at VSENSE pin in

0.792

0.

0.808

V

Relative to ideal VOUT after first

Ideal

Ideal VOUT

Ideal

Output Voltage

VOUT

V

–1.5%

VOUT

vs. Code table)

+1.5%

MOSFET

BOOT-PH = 3 V

30

60

m

Ω

BOOT-PH = 6 V

26

40

m

Ω

19

30

m

Ω

ERROR AMPLIFIER

–2

Error amplifier Transconductance (gm)

1300

μMhos

Error amplifier dc gain (production test)

VSENSE = 0.8 V

1000

3000

V/V

(1)

Measured at pins

Copyright © 2012, Texas Instruments Incorporated

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