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LM5069 Datasheet(PDF) 11 Page - Texas Instruments |
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LM5069 Datasheet(HTML) 11 Page - Texas Instruments |
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11 / 28 page ![]() TIMER Pin Load Current Output Voltage (OUT Pin) PGD UVLO Normal Operation GATE Pin Insertion Time POR IT VSYS VIN ILIMIT 16 PA source 2.5 PA 85 PA 1.25V t 3 t 2 t 1 In- rush Limiting 5.5 PA 4V 1.5 mA 2 mA pull-down 230 mA pull-down LM5069 www.ti.com SNVS452D – SEPTEMBER 2006 – REVISED MAY 2013 As the voltage at the OUT pin increases, the LM5069 monitors the drain current and power dissipation of MOSFET Q1. In-rush current limiting and/or power limiting circuits actively control the current delivered to the load. During the in-rush limiting interval (t2 in Figure 24) an internal 85 µA fault timer current source charges CT. If Q1’s power dissipation and the input current reduce below their respective limiting thresholds before the TIMER pin reaches 4.0V the 85 µA current source is switched off, and CT is discharged by the internal 2.5 µA current sink (t3 in Figure 24). The in-rush limiting interval is complete when the voltage at the OUT pin increases to within 1.25V of the input voltage (VSYS), and the PGD pin switches high. If the TIMER pin voltage reaches 4.0V before in-rush current limiting or power limiting ceases (during t2), a fault is declared and Q1 is turned off. See the Fault Timer & Restart section for a complete description of the fault mode. Figure 24. Power Up Sequence (Current Limit only) Gate Control A charge pump provides internal bias voltage above the output voltage (OUT pin) to enhance the N-Channel MOSFET’s gate. The gate-to-source voltage is limited by an internal 12V zener diode. During normal operating conditions (t3 in Figure 24) the gate of Q1 is held charged by an internal 16 µA current source to approximately 12V above OUT. If the maximum VGS rating of Q1 is less than 12V, a lower voltage external zener diode must be added between the GATE and OUT pins. The external zener diode must have a forward current rating of at least 250 mA. When the system voltage is initially applied, the GATE pin is held low by a 230 mA pull-down current. This helps prevent an inadvertent turn-on of the MOSFET through its drain-gate capacitance as the applied system voltage increases. During the insertion time (t1 in Figure 24) the GATE pin is held low by a 2 mA pull-down current. This maintains Q1 in the off-state until the end of t1, regardless of the voltage at VIN or UVLO. Following the insertion time, during t2 in Figure 24, the gate voltage of Q1 is modulated to keep the current or power dissipation level from exceeding the programmed levels. While in the current or power limiting mode the TIMER pin capacitor is charging. If the current and power limiting cease before the TIMER pin reaches 4V the TIMER pin capacitor then discharges, and the circuit enters normal operation. Copyright © 2006–2013, Texas Instruments Incorporated Submit Documentation Feedback 11 Product Folder Links: LM5069 |
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