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AM3359 Datasheet(PDF) 95 Page - Texas Instruments |
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AM3359 Datasheet(HTML) 95 Page - Texas Instruments |
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95 / 236 page ![]() AM3359, AM3358, AM3357 AM3356, AM3354, AM3352 www.ti.com SPRS717F – OCTOBER 2011 – REVISED APRIL 2013 Table 3-15. Power-Supply Decoupling Capacitor Characteristics (continued) PARAMETER TYP UNIT CVDDSHV4 (5) 10.02 μF CVDDSHV5 (5) 10.02 μF CVDDSHV6 (3) 10.06 μF (1) Not available on the ZCE package. (2) Typical values consist of 1 cap of 10 μF and 4 caps of 10 nF. (3) Typical values consist of 1 cap of 10 μF and 6 caps of 10 nF. (4) For more details on decoupling capacitor requirements for the mDDR(LPDDR), DDR2, DDR3, DDR3L memory interface, see Section 5.6.2.1.2.6 and Section 5.6.2.1.2.7 when using mDDR(LPDDR) memory devices, Section 5.6.2.2.2.6 and Section 5.6.2.2.2.7 when using DDR2 memory devices, or Section 5.6.2.3.3.6 and Section 5.6.2.3.3.7 when using DDR3 or DDR3L memory devices. (5) Typical values consist of 1 cap of 10 μF and 2 caps of 10 nF. 3.4.2 Output Capacitors Internal low dropout output (LDO) regulators require external capacitors to stabilize their outputs. These capacitors should be placed as close as possible to the respective terminals of the AM335x device. Table 3-16 summarizes the LDO output capacitor recommendations. Table 3-16. Output Capacitor Characteristics PARAMETER TYP UNIT CCAP_VDD_SRAM_CORE (1) 1 μF CCAP_VDD_RTC (1)(2) 1 μF CCAP_VDD_SRAM_MPU (1) 1 μF CCAP_VBB_MPU (1) 1 μF (1) LDO regulator outputs should not be used as a power source for any external components. (2) The CAP_VDD_RTC terminal operates as an input to the RTC core voltage domain when the RTC_KLDO_ENn terminal is high. Copyright © 2011–2013, Texas Instruments Incorporated Device Operating Conditions 95 Submit Documentation Feedback Product Folder Links: AM3359 AM3358 AM3357 AM3356 AM3354 AM3352 |
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