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28F002BC Datasheet(PDF) 34 Page - Intel Corporation |
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28F002BC Datasheet(HTML) 34 Page - Intel Corporation |
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34 / 37 page ![]() 28F002BC 2-MBIT BOOT BLOCK FLASH MEMORY E 34 PRELIMINARY ADDRESSES (A) WE# (E) OE# (G) CE# (W) DATA (D/Q) RP# (P) IH V IL V IH V IL V IH V IL V IH V IL V HH V 6.5V IL V IN D IN A IN A AVAV t IN D Valid SRD IN D QVPH t PHHEH t High Z EHDX t IH V IL V V (V) PP 12 3 4 6 5 EHAX t EHQV1,2,3,4 t EHEL t EHWH t ELEH t DVEH t VPEH t QVVL t PHWL t WLEL t AVEH t PPLK V PPH V1 2 PPH V IL V IH V IL V IH V WP# 0578_13 NOTES: 1. VCC Power-Up and Standby 2. Write Program Setup or Erase Setup Command 3. Write Valid Address and Data (Program or Erase Confirm Command 4. Automated Program or Erase Delay 5. Read Status Register Data 6. Write Read Array Command Figure 14. Alternate AC Waveforms for Write and Erase Operations (CE#—Controlled Writes) Table 11. Erase and Program Timings (TA = +25°C) VPP = 12V ± 10% 2 VPP = 12V ± 5% Parameter 1 VCC = 5V ± 10% VCC = 5V ± 10% Units Typ Max Typ Max Boot/Parameter Block Erase Time 5.8 40 1.0 7 s Main Block Erase Time 14 60 2.4 14 s Main Block Write Time 6.0 20 1.2 4.2 s NOTES: 1. All numbers are sampled, not 100% tested. 2. Erase times near max limits when the 10% VPP option is used. |
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