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28F400B3 Datasheet(PDF) 37 Page - Intel Corporation |
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28F400B3 Datasheet(HTML) 37 Page - Intel Corporation |
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37 / 49 page ![]() E SMART 3 ADVANCED BOOT BLOCK–WORD-WIDE 37 PRELIMINARY Table 13. DC Characteristics: VCCQ = 1.8V–2.2V (Continued) Sym Parameter Notes VCC1: 2.7V–2.85V VCC2: 2.7V–3.3V Unit Test Conditions Min Max VIL Input Low Voltage –0.2 0.2 V VIH Input High Voltage VCCQ – 0.2V V VOL Output Low Voltage –0.10 0.10 V VCC = VCCMin VCCQ = VCCQMin IOL = 100 µA VOH Output High Voltage VCCQ – 0.1V VVCC = VCCMin VCCQ = VCCQMin IOL = –100 µA VPPLK VPP Lock-Out Voltage 3 1.5 V Complete Write Protection VPPH1 VPP during Program/ Erase Operations 3 2.7 2.85 V VPPH2 3 2.7 3.3 V VPPH3 3,6 11.4 12.6 V VLKO1 VCC Program/Erase Lock Voltage 1.5 V VLKO2 VCCQ Program/Erase Lock Voltage 1.2 V NOTES: 1. All currents are in RMS unless otherwise noted. Typical values at nominal VCC, TA = +25°C. 2. ICCES and ICCWS are specified with device de-selected. If device is read while in erase suspend, current draw is ICCR. If the device is read while in program suspend , current draw is ICCR. 3. Erases and Writes inhibited when VPP < VPPLK, and not guaranteed outside the valid VPP ranges of VPPH1,VPPH2. or VPPH3. 4. Sampled, not 100% tested. 5. Automatic Power Savings (APS) reduces ICCR to approximately standby levels in static operation (CMOS inputs). 6. Applying VPP = 11.4V–12.6V during program/erase can only be done for a maximum of 1000 cycles on the main blocks and 2500 cycles on the parameter blocks. VPP may be connected to 12V for a total of 80 hours maximum. See Section 3.4 for details. 7 Includes the sum of VCC and VCCQ current Table 14. Capacitance (TA = 25°C, f = 1 MHz) Sym Parameter Notes Typ Max Units Conditions CIN Input Capacitance 1 6 8 pF VIN = 0V COUT Output Capacitance 1 10 12 pF VOUT = 0V NOTE: 1. Sampled, not 100% tested. |
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