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changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata

November 1994

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INTEL CORPORATION 1995

Order Number 271232-004

M28F008

8 MBIT (1 MBIT x 8) FLASH MEMORY

Y

High-Density Symmetrically Blocked

Architecture

Sixteen 64 Kbyte Blocks

Y

Extended Cycling Capability

10K Block Erase Cycles Minimum

160K Block Erase Cycles per Chip

Y

Automated Byte Write and Block Erase

Command User Interface

Status Register

Y

System Performance Enhancements

RYBY Status Output

Erase Suspend Capability

Y

SRAM-Compatible Write Interface

Y

Very High-Performance Read

100 ns Maximum Access Time

Y

Hardware Data Protection Feature

EraseWrite Lockout during Power

Transitions

Y

Industry Standard Packaging

40-Lead Sidebrazed DIP

42-Lead Flatpack

Y

12V Byte WriteBlock Erase

Y

Independent Software Vendor Support

Microsoft Flash File System (FFS)

Intel’s M28F008 8-Mbit FlashFile Memory is the highest density nonvolatile readwrite solution for solid state

storage The M28F008’s extended cycling symmetrically blocked architecture fast access time write automa-

tion and low power consumption provide a more reliable lower power lighter weight and higher performance

alternative to traditional rotating disk technology The M28F008 brings new capabilities to portable computing

Application and operating system software stored in resident flash memory arrays provide instant-on rapid

execute-in-place and protection from obsolescence through in-system software updates Resident software

also extends system battery life and increases reliability by reducing disk drive accesses

For high-density data acquisition applications the M28F008 offers a more cost-effective and reliable alterna-

tive to SRAM and battery Traditional high density embedded applications such as telecommunications can

take advantage of the M28F008’s nonvolatility blocking and minimal system code requirements for flexible

firmware and modular software designs

The M28F008 is offered in 40-lead sidebrazed DIP and 42-lead Flatpack packages This device uses an

integrated Command User Interface and state machine for simplified block erasure and byte write The

M28F008 memory map consists of 16 separately erasable 64 Kbyte blocks

Intel’s M28F008 employs advanced CMOS circuitry for systems requiring low power consumption and noise

immunity Its 100 ns access time provides superior performance when compared with magnetic storage media

input also provides absolute data protection during system powerupdown

Manufactured on Intel’s ETOX process technology the M28F008 provides the highest levels of quality reliabil-

ity and cost-effectiveness

Microsoft is a trademark of Microsoft Corporation