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M28F008 Datasheet(PDF) 17 Page - Intel Corporation

Part # M28F008
Description  8 MBIT (1 MBIT x 8) FLASH MEMORY
PDF  28 Pages
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

M28F008 Datasheet(HTML) 17 Page - Intel Corporation

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M28F008
DC CHARACTERISTICS (Continued)
Symbol
Parameter
Notes
MC28F008 and
Unit
Test Conditions
MF28F008
Min
Max
ICCW
VCC Byte Write Current
1
30
mA
Byte Write In Progress
ICCE
VCC Block Erase Current
1
30
mA
Block Erase In Progress
ICCES
VCC Erase Suspend Current
1 2
10
mA
Block Erase Suspended
CE e VIH
IPPS
VPP Standby Current
1
g
15
m
AVPP s VCC
200
m
AVPP l VCC
IPPD
VPP Deep PowerDown Current
1
20
m
ARP e GND g02V
IPPW
VPP Write Current
1
30
mA
VPP e VPPH
Byte Write in Progress
IPPE
VPP Block Erase Current
1
30
mA
VPP e VPPH
Block Erase in Progress
IPPES
VPP Erase Suspend Current
1
200
m
AVPP e VPPH
Block Erase Suspended
VIL
Input Low Voltage
b
05
08
V
VIH
Input High Voltage
20
VCCa05
V
VOL
Output Low Voltage
3
045
V
VCC e VCC Min
IOL e 58 mA
VOH
Output High Voltage
3
24
V
VCC e VCC Min
IOH eb25 mA
VPPL
VPP during Normal Operations
4
00
65
V
VPPH
VPP during EraseWrite Operations
114
126
V
VLKO
VCC EraseWrite Lock Voltage
18
V
CAPACITANCE(5) TA e 25 C f e 1 MHz
Symbol
Parameter
Typ
Max
Unit
Condition
CIN
Input Capacitance
6
8
pF
VIN e 0V
COUT
Output Capacitance
8
12
pF
VOUT e 0V
NOTES
1 All currents are in RMS unless otherwise noted
2 ICCES is specified with the device deselected If the M28F008 is read while in Erase Suspend Mode current draw is the
sum of ICCES and ICCR
3 Includes RYBY
4 Block ErasesByte Writes are inhibited when VPP e VPPL and not guaranteed in the range between VPPH and VPPL
17



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