R5F36CAMDFB datasheet(98/100 Pages) RENESAS

98 / 100 page

A - 2

2.00

Feb 07, 2011

Table 29.5 A/D Conversion Characteristics (1/2):

Added the Measuring Condition of the Resolution row.

Table 5.6 A/D Conversion Characteristics (2/2): Added the note 5.

Table 5.9 CPU Clock When Operating Flash Memory (f(BCLK)):

Added the Typ. value of the Low current consumption read mode.

Table 5.10 Flash Memory (Program ROM 1, 2) Electrical Characteristics:

• Added a condition to the Read voltage row.

• Modified note 1.

• Deleted the example stated in note 4.

Table 5.11 Flash Memory (Data Flash) Electrical Characteristics:

Changed “128 groups” to “256 groups” in note 4.

Table 5.12 Voltage Detector 0 Electrical Characteristics: Added the condition in the Vdet0

row.

Table 5.15 Power-On Reset Circuit:

• Added the Vpor1 and tw(por) row.

• Deleted the Condition of trth row.

• Added the last line in note 1.

Figure 5.5 Power-On Reset Circuit Electrical Characteristics:

• Changed the signal name “0.1 V” to “Vpor1”.

• Deleted note 2.

Table 5.17 40 MHz On-Chip Oscillator Electrical Characteristics:

Changed the Condition in the fOCO40M row.

Table 5.20 Electrical Characteristics (2): Added “ZP, IDU, IDV, IDW” to the VT+ - VT- row.

Table 5.21 Electrical Characteristics (3):

Added the During flash memory program row and During flash memory erase row.

65, 83

5.2.2.5 and 5.3.2.5 Timer S Input: Added.

67, 85

5.2.2.8 and 5.3.2.8 Multi-master I2C-bus: Added.

Table 5.36 Memory Expansion Mode and Microprocessor Mode:

Changed

RDY input setup time from 30.

68 to 75,

86 to 93

Table 5.36 to Table 5.39 and Table 5.56 to Table 5.59 Memory Expansion Mode and

Microprocessor Mode:

Deleted the following:

•

HOLD input setup time

•

HOLD input hold time

•

HLDA output delay time

69, 87

Figure 5.16 and Figure 5.29 Timing Diagram:

Deleted lower figure (Common to wait state and no wait state settings).

Table 5.40 Electrical Characteristics (1): Added “ZP, IDU, IDV, IDW” to the VT+ - VT- row.

Table 5.41 Electrical Characteristics (2):

Added the During flash memory program row and During flash memory erase row.

Table 5.56 Memory Expansion Mode and Microprocessor Mode:

Changed

RDY input setup time from 40.

2.10

Jul 31, 2011

Electrical Characteristics

Vcc = 5 V

Table 5.21 Electrical Characteristics (3): Changed the Measuring Condition column of 40

MHz on-chip oscillator for the 40 MHz on-chip oscillator mode in the ICC.

Vcc = 3 V

Table 5.41 Electrical Characteristics (2): Changed the Measuring Condition column of 40

MHz on-chip oscillator for the 40 MHz on-chip oscillator mode in the ICC.

REVISION HISTORY

M16C/6C Group Datasheet

Rev.

Date

Description

Page

Summary

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R5F36CAMDFB Datasheet(PDF) 98 Page - Renesas Technology Corp

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