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AM5728 Datasheet(PDF) 189 Page - Texas Instruments |
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AM5728 Datasheet(HTML) 189 Page - Texas Instruments |
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189 / 415 page  AM5728, AM5726 www.ti.com SPRS915O – MARCH 2014 – REVISED OCTOBER 2015 (1) VDDS in this table stands for corresponding power supply. For more information on the power supply name and the corresponding ball, see Table 4-2, POWER [11] column. (2) Hysteresis is enabled/disabled with CTRL_CORE_CONTROL_HYST_1.SDCARD_HYST register. 5.6.10 Dual Voltage LVCMOS DC Electrical Characteristics Table 5-17 summarizes the DC electrical characteristics for Dual Voltage LVCMOS Buffers. Table 5-17. Dual Voltage LVCMOS DC Electrical Characteristics PARAMETER MIN NOM MAX UNIT 1.8-V Mode VIH Input high-level threshold 0.65*VDDS V VIL Input low-level threshold 0.35*VDDS V VHYS Input hysteresis voltage 100 mV VOH Output high-level threshold (IOH = 2 mA) VDDS-0.45 V VOL Output low-level threshold (IOL = 2 mA) 0.45 V IDRIVE Pin Drive strength at PAD Voltage = 0.45V or 6 mA VDDS-0.45V IIN Input current at each I/O pin 16 µA IOZ IOZ(IPAD Current) for BIDI cell. This current is 16 µA contributed by the tristated driver leakage + input current of the Rx + weak pullup/pulldown leakage. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ IIN with pulldown Input current at each I/O pin with weak pulldown 50 120 210 µA enabled enabled measured when PAD = VDDS IIN with pullup Input current at each I/O pin with weak pullup 60 120 200 µA enabled enabled measured when PAD = 0 CPAD Pad capacitance (including package capacitance) 4 pF ZO Output impedance (drive strength) 40 Ω 3.3-V Mode VIH Input high-level threshold 2 V VIL Input low-level threshold 0.8 V VHYS Input hysteresis voltage 200 mV VOH Output high-level threshold (IOH =100µA) VDDS-0.2 V VOL Output low-level threshold (IOL = 100µA) 0.2 V IDRIVE Pin Drive strength at PAD Voltage = 0.45V or 6 mA VDDS-0.45V IIN Input current at each I/O pin 65 µA IOZ IOZ(IPAD Current) for BIDI cell. This current is 65 µA contributed by the tristated driver leakage + input current of the Rx + weak pullup/pulldown leakage. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ IIN with pulldown Input current at each I/O pin with weak pulldown 40 100 200 µA enabled enabled measured when PAD = VDDS IIN with pullup Input current at each I/O pin with weak pullup 10 100 290 µA enabled enabled measured when PAD = 0 CPAD Pad capacitance (including package capacitance) 4 pF ZO Output impedance (drive strength) 40 Ω Copyright © 2014–2015, Texas Instruments Incorporated Specifications 189 Submit Documentation Feedback Product Folder Links: AM5728 AM5726 |
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