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AM5728 Datasheet(PDF) 185 Page - Texas Instruments

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Part # AM5728
Description  AM572x SitaraTM Processors
PDF  415 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

AM5728 Datasheet(HTML) 185 Page - Texas Instruments

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AM5728, AM5726
www.ti.com
SPRS915O – MARCH 2014 – REVISED OCTOBER 2015
Table 5-11. Dual Voltage LVCMOS I2C DC Electrical Characteristics (continued)
PARAMETER
MIN
NOM
MAX
UNIT
IOZ
IOZ(IPAD Current) for BIDI cell. This current is
12
µA
contributed by the tristated driver leakage + input
current of the Rx + weak pullup/pulldown leakage.
PAD is swept from 0 to VDDS and the Max(I(PAD))
is measured and is reported as IOZ
CIN
Input capacitance
10
pF
VOL3
Output low-level threshold open-drain at 3-mA
0.2*VDDS
V
sink current
IOLmin
Low-level output current @VOL=0.2*VDDS
3
mA
tOF
Output fall time from VIHmin to VILmax with a bus
20+0.1*Cb
250
ns
capacitance CB from 10 pF to 400 pF
I2C Standard Mode – 3.3 V
VIH
Input high-level threshold
0.7*VDDS
V
VIL
Input low-level threshold
0.3*VDDS
V
Vhys
Hysteresis
0.05*VDDS
V
IIN
Input current at each I/O pin with an input voltage
31
80
µA
between 0.1*VDDS to 0.9*VDDS
IOZ
IOZ(IPAD Current) for BIDI cell. This current is
31
80
µA
contributed by the tristated driver leakage + input
current of the Rx + weak pullup/pulldown leakage.
PAD is swept from 0 to VDDS and the Max(I(PAD))
is measured and is reported as IOZ
CIN
Input capacitance
10
pF
VOL3
Output low-level threshold open-drain at 3-mA
0.4
V
sink current
IOLmin
Low-level output current @VOL=0.4V
3
mA
IOLmin
Low-level output current @VOL=0.6V for full drive
6
mA
load (400pF/400KHz)
tOF
Output fall time from VIHmin to VILmax with a bus
250
ns
capacitance CB from 5 pF to 400 pF
I2C Fast Mode – 3.3 V
VIH
Input high-level threshold
0.7*VDDS
V
VIL
Input low-level threshold
0.3*VDDS
V
Vhys
Hysteresis
0.05*VDDS
V
IIN
Input current at each I/O pin with an input voltage
31
80
µA
between 0.1*VDDS to 0.9*VDDSS
IOZ
IOZ(IPAD Current) for BIDI cell. This current is
31
80
µA
contributed by the tristated driver leakage + input
current of the Rx + weak pullup/pulldown leakage.
PAD is swept from 0 to VDDS and the Max(I(PAD))
is measured and is reported as IOZ
CIN
Input capacitance
10
pF
VOL3
Output low-level threshold open-drain at 3-mA
0.4
V
sink current
IOLmin
Low-level output current @VOL=0.4V
3
mA
IOLmin
Low-level output current @VOL=0.6V for full drive
6
mA
load (400pF/400KHz)
tOF
Output fall time from VIHmin to VILmax with a bus
20+0.1*Cb
250
ns
capacitance CB from 10 pF to 200 pF (Proper
External Resistor Value should be used as per
I2C spec)
Output fall time from VIHmin to VILmax with a bus
40
290
capacitance CB from 300 pF to 400 pF (Proper
External Resistor Value should be used as per
I2C spec)
Copyright © 2014–2015, Texas Instruments Incorporated
Specifications
185
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Product Folder Links: AM5728 AM5726



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