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AM5728 Datasheet(PDF) 188 Page - Texas Instruments |
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AM5728 Datasheet(HTML) 188 Page - Texas Instruments |
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188 / 415 page  AM5728, AM5726 SPRS915O – MARCH 2014 – REVISED OCTOBER 2015 www.ti.com NOTE USB1 and USB2 Electrical Characteristics are compliant with USB2.0 Specification Rev 2.0 dated April 27, 2000 including ECNs and Errata as applicable. 5.6.9 Dual Voltage SDIO1833 DC Electrical Characteristics Table 5-16 summarizes the DC electrical characteristics for Dual Voltage SDIO1833 Buffers. Table 5-16. Dual Voltage SDIO1833 DC Electrical Characteristics PARAMETER MIN NOM MAX UNIT Signal Names in Mode 0: mmc1_clk, mmc1_cmd, mmc1_data[3:0]; Bottom Balls: W6 / Y6 / AA6 / Y4 / AA5 / Y3; 1.8-V Mode VIH Input high-level threshold 1.27 V VIL Input low-level threshold 0.58 V VHYS Input hysteresis voltage 50 (2) mV IIN Input current at each I/O pin 30 µA IOZ IOZ(IPAD Current) for BIDI cell. This current is contributed by the 30 µA tristated driver leakage + input current of the Rx + weak pullup/pulldown leakage. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ IIN with Input current at each I/O pin with weak pulldown enabled 50 120 210 µA pulldown measured when PAD = VDDS enabled IIN with Input current at each I/O pin with weak pullup enabled measured 60 120 200 µA pullup when PAD = 0 enabled CPAD Pad capacitance (including package capacitance) 5 pF VOH Output high-level threshold (IOH = 2 mA) 1.4 V VOL Output low-level threshold (IOL = 2 mA) 0.45 V 3.3-V Mode VIH Input high-level threshold 0.625 × V VDDS VIL Input low-level threshold 0.25 × VDDS V VHYS Input hysteresis voltage 40 (2) mV IIN Input current at each I/O pin 110 µA IOZ IOZ(IPAD Current) for BIDI cell. This current is contributed by the 110 µA tristated driver leakage + input current of the Rx + weak pullup/pulldown leakage. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ IIN with Input current at each I/O pin with weak pulldown enabled 40 100 200 µA pulldown measured when PAD = VDDS enabled IIN with Input current at each I/O pin with weak pullup enabled measured 10 100 290 µA pullup when PAD = 0 enabled CPAD Pad capacitance (including package capacitance) 5 pF VOH Output high-level threshold (IOH = 2 mA) 0.75 × VDDS V VOL Output low-level threshold (IOL = 2 mA) 0.125 × V VDDS 188 Specifications Copyright © 2014–2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: AM5728 AM5726 |
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