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POWERSTEP01 Datasheet(PDF) 34 Page - STMicroelectronics |
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POWERSTEP01 Datasheet(HTML) 34 Page - STMicroelectronics |
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34 / 92 page ![]() Functional description powerSTEP01 34/92 DocID025022 Rev 5 The switch input can be used by GoUntil and ReleaseSW commands as described in Section 11.2.10 on page 78 and Section 11.2.11 on page 79. If the SW input is not used, it should be connected to VDD. Figure 14. External switch connection 7.15 Integrated power MOSFETs The typical characteristics of the 8 N-channel MOSFETs integrated into the system-in- package are listed in Table 10. 7.16 Programmable slew rate The powerSTEP01 integrates eight programmable gate drivers which allow the output slew rate to be fixed in a wide range of values. The following parameters can be adjusted: – Gate sink/source current (IGATE) – controlled current time (tCC) – Turn-off over-boost time (tOB). During the turn-on, the gate driver charges the gate forcing an IGATE current for all the controlled current time period. At the end of the controlled current phase the gate of the integrated MOSFET should be completely charged. During the turn-off the gate driver discharges the gate sinking an IGATE current for all the controlled current time period. At the beginning of the turn-off an overboost phase can be added: in this case the gate driver sinks an IOB current for the programmed tOB period in order to rapidly reach the plateau region. At the end of the controlled current time the gate of the integrated MOSFET should be completely discharged. AM12833v1 External switch SW V DD Table 10. Integrated MOSFETs characteristics at Tj = 25 °C Symbol Parameter Typical value Unit VGS(th) Gate threshold voltage 3 V Qg Total gate charge at Vgs = 10 V 25 nC VSD Source-drain diode forward on voltage at ISD = 10 A 0.8 V |
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