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NCP3235 Datasheet(PDF) 6 Page - ON Semiconductor |
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NCP3235 Datasheet(HTML) 6 Page - ON Semiconductor |
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6 / 16 page ![]() NCP3235 www.onsemi.com 6 Table 4. ELECTRICAL CHARACTERISTICS (−40 °C < TJ < +125°C, VCC = 12 V, for min/max values unless otherwise noted, TJ = +25°C for typical values) Parameter Units Max Typ Min Test Conditions Symbol OSCILLATOR Oscillator Frequency Range fsw fsw = 550 kHz 4.5 V < VCC < 21 V 500 550 600 kHz fsw = 1100 kHz 4.5 V < VCC < 21 V 990 1100 1210 Hiccup Timer Thiccup tss < 1 ms 4 ms Tss > 1 ms 4 x tss ZERO CROSSING Zero Crossing Comparator Internal Offset PGND−VSW, Automatic CCM/DCM Guaranteed by design −4.5 −3.0 −1.5 mV MODE Mode pin threshold voltage ModeTHS GND 0.25 V 49.9 k W 0.43 0.65 100 k W 0.86 1.15 174 k W 1.48 2.0 Floating 2.4 Mode pin source current IMode 8.8 10 11.2 mA ENABLE INPUT (EN) EN Input Operating Range 5.5 V Enable Threshold Voltage V_EN Min VEN rising 1.11 1.2 1.29 V Enable Threshold Voltage Max VEN falling 1.05 V Deep Disable Threshold 0.7 0.8 0.9 V Enable Pull−up Current 2 mA SOFTSTART INPUT (SS) SS Startup Delay tSSD 1.45 ms SS End Threshold SSEND 0.6 V SS Source Current ISS 2.15 2.5 2.8 mA VOLTAGE MONITOR Power Good Sink Current PG = 0.15 V 10 20 30 mA Output Overvoltage Rising Threshold 687 700 713 mV Overvoltage Fault Blanking Time 4.0 ms Output Under−Voltage Trip Threshold 475 500 525 mV Under−voltage Protection Blanking Time 20 ms POWER STAGE High−side On Resistance RDSONH VIN/VCC = 5 V, ID = 2 A 6.5 10 m W Low−side On Resistance RDSONL VIN/VCC = 5 V, ID = 2 A 2.9 5.2 m W VFBOOT IBOOT = 2 mA 28 mV THERMAL SHUTDOWN Thermal Shutdown Threshold Guaranteed by Characterization 150 °C Thermal Shutdown Hysteresis Guaranteed by Characterization 25 °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
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