NCP3235

www.onsemi.com

4

Rating

Symbol

Value

Unit

Power Supply to GND

VIN, VCC

23

−0.3

V

VSW to GND

VSWH, VSW

30

−0.6 (DC)

35 (t < 50 ns)

−5 (t < 50 ns)

V

BST to GND

BST

35 (DC)

−0.6 (DC)

40 (t < 50 ns)

V

BST to VSW

VBST_VSW

6.5 (DC)

−0.3 (DC)

V

All other input pins

6.0

−0.3

V

Electrostatic Discharge Human body model

HBM

1.0

kV

Electrostatic Discharge Charge device model

CDM

2.0

kV

Operating Ambient Temperature Range

TA

−40 to +85

°C

Operating Junction Temperature Range

TJ

−40 to +125

°C

Maximum Junction Temperature

TJ(MAX)

+150

°C

Storage Temperature Range

Tstg

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

Table 3. THERMAL INFORMATION

HS FET Junction−to−case−bottom thermal resistance (Note 1)

1.3

°C/W

LS FET Junction−to−case−bottom thermal resistance (Note 1)

0.6

°C/W

Junction−to−ambient thermal resistance

35

°C/W

a close description can be found in the ANSI SEMI standard G30−88.