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NE680 Datasheet(PDF) 1 Page - NEC |
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NE680 Datasheet(HTML) 1 Page - NEC |
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1 / 19 page  PLEASE NOTE: PLEASE NOTE: PLEASE NOTE: PLEASE NOTE: PLEASE NOTE: The following part numbers The following part numbers The following part numbers The following part numbers The following part numbers from this datasheet are not from this datasheet are not from this datasheet are not from this datasheet are not from this datasheet are not recommended for new design. recommended for new design. recommended for new design. recommended for new design. recommended for new design. Please call sales office for Please call sales office for Please call sales office for Please call sales office for Please call sales office for details: details: details: details: details: NE68035 NE68035 NE68035 NE68035 NE68035 NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES NEC's NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package styles. The NE680's high fT makes it ideal for low voltage/low current applications, down to as low as 0.5 V / 0.5 mA. IC max for the NE680 series is 35 mA. For higher current applications see the NE681 series. 300 500 1000 2000 3000 .5 1.0 1.5 2.0 2.5 25 20 15 10 5 6V, 5 mA 3V, 5 mA NE68018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Frequency, f (GHz) 00 (CHIP) 35 (MICRO-X) DESCRIPTION FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE 18 (SOT 343 STYLE) 19 (3 PIN ULTRA SUPER MINI MOLD) 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE) 39R (SOT 143R STYLE) California Eastern Laboratories |
Similar Part No. - NE680 |
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Similar Description - NE680 |
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