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NE680 Datasheet(PDF) 2 Page - NEC

Part # NE680
Description  NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
PDF  19 Pages
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

NE680 Datasheet(HTML) 2 Page - NEC

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NE680 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C)
fT
Gain Bandwidth Product at VCE = 6 V, IC = 10 mA
GHz
10
10
10
NF
Noise Figure at VCE = 6 V, IC = 5 mA, f = 1 GHz
dB
1.6
1.7
f = 2 GHz
dB
1.7
2.4
1.8
3
1.9
f = 4 GHz
dB
2.6
GNF
Associated Gain at VCE = 6 V, IC = 5 mA,
f = 1 GHz
dB
14
13.5
f = 2 GHz
dB
12.5
10.2
9.6
f = 4 GHz
dB
8
MAG
Maximum Available Gain at VCE = 6 V, IC = 10 mA
f = 1 GHz
dB
18.5
19
18.5
f = 2 GHz
dB
16.2
12.7
11.8
f = 4 GHz
dB
10.2
8.2
7.3
|S21E|2
Insertion Power Gain at VCE = 6 V, IC = 10 mA,
f = 1 GHz
dB
17
15.5
15
f = 2 GHz
dB
10.5
12.5
7.5
9.8
9.2
f = 4 GHz
dB
7.5
4.6
4.4
hFE
Forward Current Gain2 at VCE = 6 V, IC = 10 mA
50
100
250
50
100
250
VCE = 3 V, IC = 5 mA
80
160
ICBO
Collector Cutoff Current at VCB = 10 V, IE = 0 mA
µA
1.0
1.0
1.0
IEBO
Emitter Cutoff Current at VEB = 1V, IC = 0 mA
µA
1.0
1.0
1.0
CRE3
Feedback Capacitance at VCB = 1 V, IE = 0 mA, f = 1 MHz
pF
0.3
0.7
0.3
0.7
PT
Total Power Dissipation
mW
400
150
100
RTH (J-A)
Thermal Resistance (Junction to Ambient)
°C/W
833
1000
RTH (J- C)
Thermal Resistance (Junction to Case)
°C/W
120
200
200
PART NUMBER
NE68000
NE68018
NE68019
EIAJ1 REGISTERED NUMBER
2SC5013
2SC5008
PACKAGE OUTLINE
00 (CHIP)
18
19
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
PART NUMBER
NE68030
NE68033
NE68035
NE68039/39R
EIAJ1 REGISTERED NUMBER
2SC4228
2SC3585
2SC3587
2SC4095
PACKAGE OUTLINE
30
33
35
39
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
fT
Gain Bandwidth Product at VCE = 6 V, IC = 10 mA
GHz
10
10
10
10
NF
Noise Figure at VCE = 6 V, IC = 5 mA, f = 1 GHz
dB
1.5
1.6
f = 2 GHz
dB
1.7
1.8
3.0
1.7
2.4
1.7
2.5
f = 4 GHz
dB
2.9
2.1
2.6
2.6
GNF
Associated Gain at VCE = 6 V, IC = 5 mA,
f = 1 GHz
dB
12.5
11.0
f = 2 GHz
dB
9.4
9.0
12.5
11
f = 4 GHz
dB
5.3
4.2
8
6.5
MAG
Maximum Available Gain at VCE = 6 V, IC = 10 mA
f = 1 GHz
dB
17
17
18.5
18
f = 2 GHz
dB
10.9
10.9
16.2
12.4
f = 4 GHz
dB
6.8
6.7
10.2
8.7
|S21E|2
Insertion Power Gain at VCE = 6 V, IC = 10 mA,
f = 1 GHz
dB
13.5
13
17
14.5
f = 2 GHz
dB
8.5
6.7
10.5 12.5
9.6
f = 2 GHz
dB
3.6
3.7
7.5
4.9
hFE
Forward Current Gain2 at VCE = 6 V, IC = 10 mA
50
100
250
50
100
250
50
100
250
VCE = 3 V, IC = 5 mA
50 100
250
ICBO
Collector Cutoff Current at VCB = 10 V, IE = 0 mA
µA
1.0
1.0
1.0
1.0
IEBO
Emitter Cutoff Current at VEB = 1V, IC = 0 mA
µA
1.0
1.0
1.0
1.0
Cre3
Feedback Capacitance at
VCB = 3V, IE = 0 mA, f = 1 MHz
pF
0.3
0.7
VCE = 10 V, IE = 0 mA, f = 1 MHz
pF
0.3
0.8
0.2
0.7
0.25
0.8
PT
Total Power Dissipation
mW
150
200
290
200
RTH (J-A)
Thermal Resistance (Junction to Ambient)
°C/W
833
620
550
620
RTH (J- C)
Thermal Resistance (Junction to Case)
°C/W
200
200
200
200
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, PW≤350 µs, duty cycle ≤2%.
3. The emitter terminal should be connected to the ground
terminal of the 3 terminal capacitance bridge.



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