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16F630 Datasheet(PDF) 94 Page - Microchip Technology |
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16F630 Datasheet(HTML) 94 Page - Microchip Technology |
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94 / 132 page ![]() PIC16F630/676 DS40039C-page 92 2003 Microchip Technology Inc. 12.5 DC Characteristics: PIC16F630/676-E (Extended) Standard Operating Conditions (unless otherwise stated) Operating temperature -40 °C ≤ TA ≤ +125°C for extended Param No. Device Characteristics Min Typ† Max Units Conditions V DD Note D020E Power-down Base Current (I PD) — 0.00099 3.5 µA 2.0 WDT, BOD, Comparators, V REF, and T1OSC disabled — 0.0012 4.0 µA3.0 — 0.0029 8.0 µA5.0 D021E — 0.3 6.0 µA2.0 WDT Current(1) —1.8 9.0 µA3.0 —8.4 20 µA5.0 D022E — 58 70 µA 3.0 BOD Current(1) — 109 130 µA5.0 D023E — 3.3 10 µA 2.0 Comparator Current(1) —6.1 13 µA3.0 — 11.5 24 µA5.0 D024E — 58 70 µA2.0 CV REF Current(1) —85 100 µA3.0 — 138 165 µA5.0 D025E — 4.0 10 µA 2.0 T1 O SC Current(1) —4.6 12 µA3.0 —6.0 20 µA5.0 D026E — 0.0012 6.0 µA 3.0 A/D Current(1) — 0.0022 8.5 µA5.0 † Data in ‘Typ’ column is at 5.0V, 25 °C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: The peripheral current is the sum of the base I DD or IPD and the additional current consumed when this peripheral is enabled. The peripheral ∆ current can be determined by subtracting the base IDD or IPD current from this limit. Max values should be used when calculating total current consumption. 2: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V DD. |
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