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16F630 Datasheet(PDF) 96 Page - Microchip Technology

Part # 16F630
Description  14-Pin FLASH-Based 8-Bit CMOS Microcontrollers
PDF  132 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

16F630 Datasheet(HTML) 96 Page - Microchip Technology

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PIC16F630/676
DS40039C-page 94
 2003 Microchip Technology Inc.
12.7
DC Characteristics: PIC16F630/676-I (Industrial), PIC16F630/676-E (Extended)
(Cont.)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C
≤ TA ≤ +85°C for industrial
-40°C
≤ TA ≤ +125°C for extended
Param
No.
Sym
Characteristic
Min
Typ†
Max
Units
Conditions
Capacitive Loading Specs
on Output Pins
D100
COSC2 OSC2 pin
—
—
15*
pF
In XT, HS and LP modes when
external clock is used to drive
OSC1
D101
C
IO
All I/O pins
—
—
50*
pF
Data EEPROM Memory
D120
E
D
Byte Endurance
100K
1M
—
E/W -40
°C ≤ TA ≤ +85°C
D120A
E
D
Byte Endurance
10K
100K
—
E/W +85°C
≤ TA ≤ +125°C
D121
V
DRW VDD for Read/Write
V
MIN
—
5.5
V
Using EECON to read/write
V
MIN = Minimum operating
voltage
D122
T
DEW
Erase/Write cycle time
—
5
6
ms
D123
T
RETD Characteristic Retention
40
—
—
Year Provided no other specifications
are violated
D124
T
REF
Number of Total Erase/Write
Cycles before Refresh(1)
1M
10M
—
E/W -40
°C ≤ TA ≤ +85°C
Program FLASH Memory
D130
E
P
Cell Endurance
10K
100K
—
E/W -40
°C ≤ TA ≤ +85°C
D130A
E
D
Cell Endurance
1K
10K
—
E/W +85°C
≤ TA ≤ +125°C
D131
V
PR
V
DD for Read
V
MIN
—5.5
V
V
MIN = Minimum operating
voltage
D132
V
PEW
V
DD for Erase/Write
4.5
—
5.5
V
D133
T
PEW
Erase/Write cycle time
—
2
2.5
ms
D134
T
RETD Characteristic Retention
40
—
—
Year Provided no other specifications
are violated
*
These parameters are characterized but not tested.
†
Data in ‘Typ’ column is at 5.0V, 25
°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: See Section 8.5.1 for additional information.



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