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LM4854 Datasheet(PDF) 7 Page - National Semiconductor (TI) |
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LM4854 Datasheet(HTML) 7 Page - National Semiconductor (TI) |
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7 / 29 page ![]() Electrical Characteristics for Entire Amplifier (V DD = 3.0V) (Continued) The following specifications apply for circuit shown in Figure 1, unless otherwise specified. Limits apply for T A = 25˚C. Symbol Parameter Conditions LM4854 Units (Limits) Typical (Note 8) Limit (Notes 9, 10) PSRR Power Supply Rejection Ratio C BYPASS = 1.0µF, RSOURCE =10 Ω V RIPPLE = 200mVp-p sinewave BTL, R L =8 Ω,R IN =10 Ω f IN = 217Hz f IN = 1kHz SE, R L =32 Ω,R IN =10 Ω f IN = 217Hz f IN = 1kHz 62 62 dB dB 68 72 dB dB t RSH Return-from-Shutdown Time C BYPASS = 1.0µF 200 ms t RST Return-from-Standby Time 0.1 1.0 ms(max) V IH Shutdown or Standby Logic High Treshold 1.4 V (min) V IL Shutdown or Standby Logic Low Treshold 0.4 V (max) Electrical Characteristics : Bridged-Mode Operation (V DD = 3.0V) (Notes 4, 9) The following specifications apply for for the circuit shown in Figure 1 and a measurement bandwith of 20Hz to 80kHz, unless otherwise specified. Limits apply for T A = 25˚C. Symbol Parameter Conditions LM4854 Units (Limits) Typical (Note 8) Limit (Notes 9, 10) P O Output Power (Note11) THD = 1% (max); f = 1kHz (Note11) R L =4 Ω (LM4854LD) R L =8 Ω 1.0 380 350 W mW (min) THD = 10% (max); f = 1kHz (Note11) R L =4 Ω (LM4854LD) R L =8 Ω 1.1 530 W mW THD+N Total Harmonic Distortion+Noise 20Hz ≤ f IN ≤ 20kHz R L =4 Ω,P O = 800mW (LM4854LD) R L =8 Ω,P O = 150mW 0.3 0.21 % % f IN = 1kHz R L =4 Ω,P O = 500mW (LM4854LD) R L =8 Ω,P O = 150mW 0.1 0.075 % % S/N Signal-to-Noise Ratio f IN = 1kHz, CBYPASS = 1.0µF P O = 900mW, RL =8 Ω 90 dB www.national.com 7 |
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