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AT32032 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard)

Part # AT32032
Description  AT32032
PDF  14 Pages
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Manufacturer  HP [Agilent(Hewlett-Packard)]
Direct Link  http://www.home.agilent.com
Logo HP - Agilent(Hewlett-Packard)

AT32032 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard)

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AT-32032 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
V
EBO
Emitter-Base Voltage
V
1.5
V
CBO
Collector-Base Voltage
V
11
V
CEO
Collector-Emitter Voltage
V
5.5
I
C
Collector Current
mA
32
PT
Power Dissipation[2, 3]
mW
200
T
j
Junction Temperature
°C
150
T
STG
Storage Temperature
°C
-65 to 150
Electrical Specifications, T
A=25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
NF
Noise Figure
f=0.9 GHz
dB
1.0
1.3
V
CE=2.7V, IC=5mA
f=1.8 GHz
1.25
G
A
Associated Gain
f=0.9 GHz
dB
13.5
15
V
CE=2.7V, IC=5mA
f=1.8 GHz
10.5
h
FE
Forward Current Transfer Ratio
V
CE=2.7V, IC=5mA
–
70
300
ICBO
Collector Cutoff Current
VCB=3V
µA0.2
I
EBO
Emitter Cutoff Current
V
EB=1V
µA1.5
AT-32032 Characterization Information, T
A=25°C
Symbol
Parameters and Test Conditions
Units
Typ.
P
1dB
Power at 1 dB Gain Compression (opt tuning)
V
CE=2.7V, IC=20mA
f=0.9 GHz
dBm
13
G
1dB
Gain at 1 dB Gain Compression (opt tuning)
V
CE=2.7V, IC=20mA
f=0.9GHz
dB
15.5
IP
3
Output Third Order Intercept Point (opt turning)
V
CE=2.7V, IC=20mA
f=0.9 GHz
dBm
23
|S
21|E
2
Gain in 50
Ω System
V
CE=2.7V, IC=2mA
f=0.9 GHz
dB
11.5
Thermal Resistance[2] :
θ
jc=350°C/W
注 1：これらのパラメータのいずれかを超
える状態でデバイスを動作させる
と、永久的な損傷を受ける可能性
があります。
注 2：TMOUNTING SURFACE=25℃。
注 3：TC>80℃の場合は、2.86mW/℃の割
合で定格を下げてください。
88759/04-5.PM6.0J
2001.04.25, 7:54 PM
Page 2
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