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HT32F52243 Datasheet(PDF) 31 Page - Holtek Semiconductor Inc

Part # HT32F52243
Description  32-Bit Arm Cortex -M0 Microcontroller, up to 128 KB Flash and 16 KB SRAM
PDF  44 Pages
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Manufacturer  HOLTEK [Holtek Semiconductor Inc]
Direct Link  http://www.holtek.com
Logo HOLTEK - Holtek Semiconductor Inc

HT32F52243 Datasheet(HTML) 31 Page - Holtek Semiconductor Inc

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Rev. 1.00
�1 of 44
��to�e� ��� �01�
��-Bit A�m® Co�tex®-M0+ MCU
HT��F5��4�/HT��F5��5�
Table 10. LVD/BOD Characteristics
TA = �5 °C, unless otherwise specified.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
VB�D
Voltage of B�own
�ut Dete�tion
TA = -40 °C ~ 85 °C
Afte� fa�to�y-t�immed
(VDD Falling edge)
�.0�
�.1
�.18
V
VLVD
Voltage of Low
Voltage Dete�tion
TA = -40 °C ~ 85 °C
(VDD Falling edge)
LVDS = 000 �.1�
�.�5
�.��
V
LVDS = 001 �.��
�.4
�.48
V
LVDS = 010 �.4�
�.55
�.6�
V
LVDS = 011 �.6�
�.�
�.�8
V
LVDS = 100 �.��
�.85
�.9�
V
LVDS = 101 �.9�
�.0
�.08
V
LVDS = 110 �.0�
�.15
�.��
V
LVDS = 111 �.��
�.�
�.�8
V
VLVDHTST
LVD Hyste�esis
VDD = �.� V
—
—
100
—
mV
tsuLVD
LVD Setup Time
VDD = �.� V
—
—
—
5
μs
tatLVD
LVD A�tive Delay
Time
VDD = �.� V
—
—
—
—
μs
IDDLVD
�pe�ation Cu��ent (�) VDD = �.� V
—
—
5
15
μA
Notes: 1. Data �ased on �ha�a�te�ization �esults only� not tested in p�odu�tion.
�. Gua�anteed �y design� not tested in p�odu�tion.
�. Bandgap �u��ent is not in�luded.
4. LVDS field is in the PWRCU LVDCSR register
External Clock Characteristics
Table 11. High Speed External Clock (HSE) Characteristics
TA = �5 °C, unless otherwise specified.
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
VDD
�pe�ation Range
—
�.0
—
�.6
V
fHSE
High Speed Exte�nal �s�illato�
F�equen�y (HSE)
—
4
—
16
MHz
CLHSE
Load Capa�itan�e
VDD = �.� V� RESR = 100 Ω
@ 16 MHz
—
—
��
pF
RFHSE
Inte�nal Feed�a�k Resisto�
�etween XTALIN and
XTAL�UT Pins
—
—
1
—
MΩ
RESR
Equivalent Se�ies Resistan�e*
VDD = �.� V� CL = 1� pF
@ 16 MHz� HSEDR = 0
—
—
160
Ω
VDD = �.4 V� CL = 1� pF
@ 16 MHz� HSEDR = 1
DHSE
HSE �s�illato� Duty Cy�le
—
40
—
60
%
IDDHSE
HSE �s�illato� Cu��ent
Consumption
VDD = �.� V @ 16 MHz
—
TBD
—
mA
IPWDHSE
HSE �s�illato� Powe� Down
Cu��ent
VDD = �.� V
—
—
0.01
μA
tSUHSE
HSE �s�illato� Sta�tup Time
VDD = �.� V
—
—
4
ms



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