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MP3429GL Datasheet(PDF) 4 Page - Monolithic Power Systems |
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MP3429GL Datasheet(HTML) 4 Page - Monolithic Power Systems |
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4 / 22 page ![]() MP3429 – 21A, HIGH-EFFICIENCY, FULLY INTEGRATED, SYNC, BOOST CONVERTER MP3429 Rev. 1.0 www.MonolithicPower.com 4 6/8/2017 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. ELECTRICAL CHARACTERISTICS VIN = VEN = 3.3V, TJ = -40°C to 125°C (7), typical values are tested at TJ = 25°C, unless otherwise noted. Parameter Symbol Condition Min Typ Max Units Power Supply Start-up input voltage VST No VDD bias 2.7 13 V VDD = 3V 0.9 13 V Operating input voltage VIN 0.8 13 V Operating VDD voltage (8) VDD VIN = 2.7V, 0 - 10mA 2.3 2.55 V VIN = 12V, 0 - 15mA 3.4 V VDD UVLO rising (8) VDDUVLO-R VDD rising 2.2 2.4 2.6 V VDD UVLO falling VDDUVLO-F VDD falling 2 2.2 2.4 V Shutdown current ISD VEN = 0V, measured on VIN 2 μA Quiescent current IQ VFB = 1.1V, VIN = 3V, VOUT = 9V, no switching, measured on VIN 25 μA VFB = 1.1V, VIN = 3V, VOUT = 9V, no switching, measured on VOUT 450 550 μA Enable (EN) Control EN turn-on threshold voltage VEN-ON VEN rising (switching) 1.23 V EN high threshold voltage VEN-H VEN rising (micro power) 1.0 V EN low threshold voltage VEN-L VEN falling (micro power) 0.4 V EN turn-on hysteresis current IEN-HYS 1.0V < EN < VEN-ON 3.5 5 6.5 μA EN input current IEN VEN = 0V, 1.5V 0 μA EN turn-on delay EN on to switching 180 μs Frequency Switching frequency FSW VIN = 3.3V, VOUT = 9V 500 600 700 kHz LS-FET minimum on time (9) TMIN-ON 80 ns LS-FET maximum on time TMAX-ON 7.5 μs Loop Control FB reference voltage VREF TJ = 25°C 0.99 1 1.01 V TJ = -40°C to 125°C 0.985 1 1.015 V FB input current IFB VFB = 1.1V 50 nA Error amp voltage gain (10) AV-EA 300 V/V Error amp transconductance GEA 450 μA/V Error amp max. output current VFB = 0.8V, VCOMP = 1V 63 μA VFB = 1.2V, VCOMP = 1V -60 μA COMP to current gain Gcs 22 A/V COMP PSM threshold (9) VPSM VMODE = 0V 0.5 V COMP high clamp VFB = 0.8V 2.6 V Soft-start charge current ISS 6 7.5 9 μA MODE Selection PSM MODE tri-state region VMODE-TRI 0.2 0.7 V USM MODE tri-state region (11) 0.9 1.2 FCCM MODE tri-state region 1.6 VDD Ultrasonic mode frequency FUSM 23 33 kHz HS-FET ZCD PSM, VFB = 1V, L = 1.5 μH, VOUT = 9V -200 0 300 mA HS-FET ZCD (9) (12) VFB = 1.1V, USM and FCCM -2 A |
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