TPS61372 datasheet(24/35 Pages) TI1

24 / 35 page

CH2: EN

2.0 V / div

CH1: VOUT

5.0 V / div

CH4: Load

1.0 A / div

CH2: EN

2 V / div

CH1: VOUT

5 V / div

CH4: Load

1 A / div

CH1: VOUT_AC

20 mV / div

CH3: SW

5.0 V / div

CH4: IL

1.0 A / div

CH1: VOUT_AC

50 mV / div

CH2: SW

7.0 V / div

CH4: IL

1.0 A / div

TPS61372

SLVSEE7 – JUNE 2018

www.ti.com

Product Folder Links: TPS61372

Submit Documentation Feedback

9.2.3.4.3

Selecting the Bootstrap Capacitor

The bootstrap capacitor between the BST and SW pin supplies the gate current to charge the high-side FET

device gate during each cycle’s turn-on and also supplies charge for the bootstrap capacitor. The recommended

value of the bootstrap capacitor is 20 nF to 200 nF. CBST should be a good quality, low ESR, ceramic capacitor

located at the pins of the device to minimize potentially damaging voltage transients caused by trace inductance.

A value of 100 nF is selected for this design example.

9.2.4 TPS61372 Application Waveform

Typical condition VIN = 3 V to 4.5 V, VOUT = 12 V， Temp = 25°C， unless otherwise noted

VIN = 4 V

VOUT= 12 V

Mode = Auto PFM

L = 2.2 µH

COUT= 3 × 10 µF

Figure 17. Steady-state at 200 mA Load

VIN = 4 V

VOUT= 12 V

Mode = Auto PFM

L = 2.2 µH

COUT= 3 × 10 µF

Figure 18. Steady-state at 10 mA Load

VIN = 4 V

VOUT= 12 V

Mode = Auto PFM

L = 2.2 µH

COUT= 3 × 10 µF

Figure 19. Startup by EN, Load = 12.5 Ω

VIN = 4 V

VOUT= 12 V

Mode = Auto PFM

L = 2.2 µH

COUT= 3 × 10 µF

Figure 20. Shutdown by EN, Load = 12.5 Ω

TPS61372 Datasheet(PDF) 24 Page - Texas Instruments

TPS61372 Datasheet(HTML) 24 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35

Datasheet Download

Link URL