Rev. D 11/22

29

HiperLCS-2

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Parameter

Symbol

Conditions

BPS = 12 V

T

J = 0 °C to 100 °C

(Unless Otherwise Specified)

Min

Typ

Max

Units

Secondary-Side of Safety Isolation Barrier (cont.)

D1 and D2 Pin

D1, D2 Breakdown

Voltage

BV

D1D2

150

V

D1, D2 External Resistor

R

D1D2(EXT)

Recommended external R between SR FET

Drain and D1, D2 pin

200

1500

W

D1, D2 Inverse Current

I

D1D2(INV)

Allowed current out of D1, D2 when below GND

-5

mA

D1, D2 SR On Threshold

V

D1D2ON(TH)

See Note E

-275

-250

-210

mV

D1, D2 SR Off Threshold

V

D1D2OFF(TH)

See Note E

3

8.5

12.5

mV

D1, D2 SR Off Threshold

Matching

∆

V

D1D2OFF

-2.6

0

2.6

mV

D1, D2 Ouput Bias

Current ‒ Off

I

D1D2OFF

Bias Current Out of D1, D2 at V

D1D2OFF(TH)

-17

-13

-9

m

A

Secondary Control Over-Temperature

Secondary Control

Over-Temperature Stop

SC

(OT)(STOP)

See Note A

123

130

137

°C

Secondary Control

Over-Temperature Start

SC

(OT)(START)

See Note A

75

°C

Primary-Side of Safety Isolation Barrier

5VL Pin

5VL Power-Up

Threshold

V

5VL(UV+)

C5VL = 1 mF / 10 V Ceramic

3

3.5

4

V

5VL Power-Up

Hysteresis

V

5VL(HYST)

C5VL = 1 mF / 10 V Ceramic

1.5

V

FL Pin

FL - Logic 1 Output

Voltage

V

FL(1)

I

FL = 10 mA, 5VL = 5 V

4.55

4.7

4.929

V

FL - Logic 0 Output

Voltage

V

FL(0)

I

FL = +10 mA

0.17

0.25

0.42

V

NOTES:

A. Not tested parameter. Guaranteed by design.

B. In typical LLC application circuit.

C. Normally limited by internal circuitry.

D. Not tested parameter. Based on device characterization.

E. Production test limits. Observed operational threshold for SR MOSFET drain (D1, D2), also depends on chosen

D1, D2 resistors R

D1D2(EXT) values.