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LTC4359 Datasheet(PDF) 14 Page - Analog Devices

Part # LTC4359
Description  Floating, High-Voltage Active Rectifier Controller
PDF  29 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

LTC4359 Datasheet(HTML) 14 Page - Analog Devices

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Data Sheet
LT4322
analog.com
Rev. 0
14 of 29
RDS(ON)< 100 mV/IAVG
(2)
For AC full-bridge rectifier applications, use:
RDS(ON)< 100 mV/(3 × IAVG) (3)
The AC input calculation assumes the duration of the current conduction occupies 1/3 of the AC period.
For very high output current applications, users may connect several MOSFETs in parallel to reduce the overall RDS(ON).
The LT4322’s high-speed transconductance (GM AMP) amplifier is capable of driving up to 100nF MOSFET gate
capacitance at frequencies up to 100kHz. At initial power-up, the application output capacitance is initially charged
via the body diode of the power MOSFET until the LT4322 has enough supply voltage to properly control the MOSFET
gate. Ensure the MOSFET has a sufficient continuous body diode current rating IS to handle the current at startup.
The LT4322’s GATE drive ranges from 10V to 14V when powered from VDDC input supply voltages greater than or equal
to 15V. When powered directly from VDDA, the GATE drive voltage equals the VDDA voltage. VGS(TH) must be a minimum
of 2V or higher. A gate threshold voltage lower than 2V is not recommended because too much time is needed to
discharge the gate below the threshold and halt reverse current conduction when the input AC voltage falls below
the CATHODE output voltage.
GATE Capacitor Selection
The GM amplifier is optimally compensated with 10nF capacitance between the gate and source of the external
power MOSFET. For applications using MOSFETs with CISS less than 10nF and/or when voltage peaking is observed in
the GATE waveform, adding a 10nF ceramic capacitor CGATE directly across the gate and source of the external power
MOSFET can greatly improve the stability of the forward regulation voltage. This comes at the expense of the added
charge needed to enhance the gate of the external MOSFET. For high output current and/or high frequency
applications where the circuit is rarely in forward regulation, this capacitor can be omitted.
Output Capacitor COUT Selection
Capacitance COUT is needed across the application output voltage and system ground to provide the output load
current for the majority of the AC period. Downstream power needs and voltage ripple tolerance determine how
much capacitance is required. COUT in the hundreds to thousands of microfarads is common. A combination of
electrolytic and ceramic capacitors is used to optimize capacitance ESR while minimizing cost. Add a 1µF ceramic
capacitor from the output to the ground near the LT4322 if the bulk electrolytic capacitors are physically remote
from the LT4322.
For full-wave rectifier applications, a good starting point is selecting COUT such that:
COUT ≥ IAVG/(VRIPPLE × 2 × Freq)
(4)
Where IAVG is the average output load current, VRIPPLE is the maximum tolerable output ripple voltage, and Freq is the
frequency of the AC input source. For example, in a 60Hz, 24V application where the load current is 1A and the
tolerable ripple is 15V, choose:
COUT ≥ 1A/(15V × 2 × 60Hz) = 556µF
(5)
For half-wave rectifier applications, use:
COUT ≥ IAVG/(VRIPPLE × Freq)
(6)
Users must also ensure that the RMS current in the electrolytic capacitors does not exceed the maximum ripple
current rating so that the capacitor’s lifetime is not compromised. An electrolytic capacitor’s ripple current rating is a
function of RMS current, frequency, and ambient temperature. Consult the manufacturer’s specifications and ensure



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