TMUX8212 datasheet(28/42 Pages) TI

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10.2.3 Application Curves

The example application utilizes the excellent leakage and On-Resistance flatness performance of the

TMUX821x devices. Figure 10-2 shows the leakage current for a channel that is ON across a varying source

voltage. Figure 10-3 shows the extremely flat On-Resistance across source voltage while operating within the

flattest RON range of the TMUX821x devices. These features make the devices an ideal solution for applications

that require excellent linearity and low distortion.

VS or VD - Source or Drain Voltage (V)

-36

-28

-20

-12

-4

-0.6

-0.5

-0.4

-0.3

-0.2

-0.1

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

TA = 125C

TA = 85C

TA = 25C

Figure 10-2. On-Leakage

VS or VD - Source or Drain Voltage (V)

-40

-30

-20

-10

TA = -40C

TA = 25C

TA = 85C

TA = 125C

Figure 10-3. RON Flatness

11 Power Supply Recommendations

The TMUX821x devices operate across a wide supply range of ±10 V to ±50 V (10 V to 100 V in single-supply

mode). They also perform well with asymmetrical supplies such as VDD = 50 V and VSS= –10 V. For improved

supply noise immunity, use a supply decoupling capacitor ranging from 1 µF to 10 µF at both the VDD and VSS

pins to ground. An additional 0.1 µF capacitor placed closest to the supply pins will provide the best supply

decoupling solution. Always ensure the ground (GND) connection is established before supplies are ramped.

TMUX8211, TMUX8212, TMUX8213

SCDS434B – OCTOBER 2021 – REVISED MARCH 2023

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