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S71GS256 Datasheet(PDF) 174 Page - SPANSION

Part # S71GS256
Description  128N based MCPs
PDF  195 Pages
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Manufacturer  SPANSION [SPANSION]
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S71GS256 Datasheet(HTML) 174 Page - SPANSION

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174
CellularRAM-2A
cellRAM_02_A0 December 15, 2004
Advan ce
In form ati o n
ation altogether and is used when no vital information is stored in the device.
These three refresh mechanisms are accessed through the CR.
Note: Functional block diagrams illustrate simplified device operation. See truth table, pin descriptions, and timing di-
agrams for detailed information.
Figure 64. Functional Block Diagram
Table 65. Pin Descriptions
Symbol
Type
Description
A[21:0]
Input
Address Inputs: Inputs for the address accessed during READ or WRITE operations. The
address lines are also used to define the value to be loaded into the configuration register.
ZZ#
Input
Sleep Enable: When ZZ# is LOW, the configuration register can be loaded or the device can
enter one of two low-power modes (DPD or PAR).
CE#
Input
Chip Enable: Activates the device when LOW. When CE# is HIGH, the device is disabled and
goes into standby power mode.
OE#
Input
Output Enable: Enables the output buffers when LOW. When OE# is HIGH, the output
buffers are disabled.
WE#
Input
Write Enable: Enables WRITE operations when LOW.
LB#
Input
Lower Byte Enable. DQ[7:0]
UB#
Input
Upper Byte Enable. DQ[15:8]
DQ[15:0]
Input/
Output
Data Inputs/Outputs.
VCC
Supply
Device Power Supply: (1.7 V–1.95 V) Power supply for device core operation.
VCCQ
Supply
I/O Power Supply: (1.8 V) Power supply for input/output buffers.
VSS
Supply
VSS must be connected to ground.
A[21:0]
Input/
Output
MUX
and
Buffers
Control
Logic
4,096K x 16
DRAM
Memory
Array
CE#
WE#
OE#
LB#
UB#
DQ[7:0]
DQ[15:8]
Address Decode
Logic
Configuration
Register (CR)
ZZ#



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