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S71GS256 Datasheet(PDF) 177 Page - SPANSION |
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S71GS256 Datasheet(HTML) 177 Page - SPANSION |
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177 / 195 page  December 15, 2004 cellRAM_02_A0 CellularRAM-2A 177 Ad vance Info rmat i o n Page Mode READ Operation Page mode is a performance-enhancing extension to the legacy asynchronous READ operation. In page mode-capable products, an initial asynchronous read access is performed, then adjacent addresses can be quickly read by simply changing the low-order address. Addresses A[3:0] are used to determine the members of the 16-address CellularRAM page. Addresses A[4] and higher must remain fixed during the entire page mode access. Figure 68 shows the timing di- agram for a page mode access. Figure 66. READ Operation Figure 67. WRITE Operation Data Valid Address Valid tRC = READ Cycle Time CE# OE# WE# ADDRESS DATA LB#/UB# Don't Care Data Valid Address Valid tWC = WRITE Cycle Time CE# OE# WE# ADDRESS DATA LB#/UB# Don't Care |
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