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S71GS256 Datasheet(PDF) 180 Page - SPANSION |
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S71GS256 Datasheet(HTML) 180 Page - SPANSION |
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180 / 195 page ![]() 180 CellularRAM-2A cellRAM_02_A0 December 15, 2004 Advan ce In form ati o n tering the refresh parameters can dramatically reduce current consumption during standby mode. Page mode control is also embedded into the configuration register. Table 67 describes the control bits used in the CR. At power up, the CR is set to 0070h. Figure 69. Load Configuration Register Operation Partial Array Refresh (CR[2:0]) Default = Full Array Refresh The PAR bits restrict refresh operation to a portion of the total memory array. This feature allows the system to reduce current by only refreshing that part of the memory array required by the host system. The refresh options are full array, three-quarters array, one-half array, one-quarter array, or none of the array. The mapping of these partitions can start at either the beginning or the end of the address map (see Table 68 on page 181). Sleep Mode (CR[4]) Default = PAR Enabled, DPD Disabled The sleep mode bit determines which low-power mode is to be entered when ZZ# is driven LOW. If CR[4] = 1, PAR operation is enabled. If CR[4] = 0, DPD opera- tion is enabled. DPD operation disables all refresh-related activity. This mode will be used when the system does not require the storage provided by the CellularRAM device. Any stored data will become corrupted when DPD is enabled. When refresh activity has been re-enabled, the CellularRAM device will require 150µs to perform an ini- tialization procedure before normal operation can resume. Temperature Compensated Refresh (CR[6:5]) Default = +85°C Operation The TCR bits allow for adequate refresh at four different temperature thresholds: +15°C, +45°C, +70°C, and +85°C. The setting selected must be for a tempera- ture higher than the case temperature of the CellularRAM device. If the case temperature is +50°C, the system can minimize self refresh current consumption by selecting the +70°C setting. The +15°C and +45°C settings would result in inadequate refreshing and cause data corruption. Page Mode READ Operation (CR[7]) Default = Disabled The page mode operation bit determines whether page mode READ operations are enabled. In the power-up default state, page mode is disabled. ADDRESS VALID CE# ZZ# WE# t < 500ns ADDRESS |
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