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S29PL-J55BAI011 Datasheet(PDF) 55 Page - SPANSION

Part # S29PL-J55BAI011
Description  CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control
PDF  96 Pages
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Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
Logo SPANSION - SPANSION

S29PL-J55BAI011 Datasheet(HTML) 55 Page - SPANSION

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September 22, 2006 S29PL-J_00_A9
S29PL-J
53
Da ta
Sh e e t
(Adv a n ce
In f o r m ation)
Table 14.1 CFI Query Identification String
Addresses
Data
Description
10h
11h
12h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
0002h
0000h
Primary OEM Command Set
15h
16h
0040h
0000h
Address for Primary Extended Table
17h
18h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
Table 14.2 System Interface String
Addresses
Data
Description
1Bh
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0036h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
0003h
Typical timeout per single byte/word write 2
N µs
20h
0000h
Typical timeout for Min. size buffer write 2N
µs (00h = not supported)
21h
0009h
Typical timeout per individual block erase 2
N ms
22h
0000h
Typical timeout for full chip erase 2
N ms (00h = not supported)
23h
0004h
Max. timeout for byte/word write 2N times typical
24h
0000h
Max. timeout for buffer write 2
N times typical
25h
0004h
Max. timeout per individual block erase 2
N times typical
26h
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)



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