6

TLC555

SLFS043I – SEPTEMBER 1983 – REVISED JULY 2019

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Copyright © 1983–2019, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values are with respect to network GND.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)Continuous total power dissipation and lead temperature

parameters from Absolute Maximum Ratings

MIN

MAX

UNIT

Voltage

Supply, VDD

(2)

–0.3

18

V

Input, any input

–0.3

VDD

Discharge

–0.3

18

Current

Sink, discharge or output

150

mA

Source, output, IO

15

Temperature

Operating, TA

C-suffix

0

70

°C

I-suffix

–40

85

Q-suffix

–40

125

M-suffix

–55

125

Case, for 60 seconds

FK package

–65

150

Storage, Tstg

–65

150

6.2 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Supply voltage, VDD

TLC555C

2

15

V

TLC555I

3

15

TLC555M

5

15

TLC555Q

5

15

Operating free-air

temperature, TA

TLC555C

0

70

°C

TLC555I

–40

85

TLC555M

–55

125

TLC555Q

–40

125

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.3 Thermal Information

THERMAL METRIC(1)

TLC555

UNIT

D

(SOIC)

FK

(LCCC)

JG

(CDIP)

P

(PDIP)

PS

(SOP)

PW

(TSSOP)

8 PINS

20 PINS

8 PINS

8 PINS

8 PINS

14 PINS

RθJA

Junction-to-ambient thermal resistance

113

n/a

120

58

120

135

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

58

37

81

48

72

61

°C/W

RθJB

Junction-to-board thermal resistance

55

36

110

35

69

77

°C/W

ψJT

Junction-to-top characterization

parameter

11

n/a

45

26

32

12

°C/W

ψJB

Junction-to-board characterization

parameter

54

n/a

103

35

68

77

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal

resistance

n/a

4.3

31

n/a

n/a

n/a

°C/W