Data Sheet

AD5121/AD5141

SPECIFICATIONS

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Rev. E | 5 of 30

1 Typical values represent average readings at 25°C, VDD = 5 V, VSS = 0 V, and VLOGIC = 5 V.

2 Resistor integral nonlinearity (R-INL) error is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper positions.

R-DNL measures the relative step change from ideal between successive tap positions. The maximum wiper current is limited to (0.7 × VDD)/RAB.

3 Guaranteed by design and characterization, not subject to production test.

4 INL and DNL are measured at VWB with the RDAC configured as a potentiometer divider similar to a voltage output DAC. VA = VDD and VB = 0 V. DNL specification limits of

±1 LSB maximum are guaranteed monotonic operating conditions.

5 Resistor Terminal A, Resistor Terminal B, and Resistor Terminal W have no limitations on polarity with respect to each other. Dual-supply operation enables ground

referenced bipolar signal adjustment.

6 Different from operating current; supply current for EEPROM program lasts approximately 30 ms.

7 Different from operating current; supply current for EEPROM read lasts approximately 20 µs.

8 PDISS is calculated from (IDD × VDD) + (ILOGIC × VLOGIC).

9 All dynamic characteristics use VDD/VSS = ±2.5 V, and VLOGIC = 2.5 V.

10 Endurance is qualified to 100,000 cycles per JEDEC Standard 22, Method A117 and measured at −40°C to +125°C.

11 Retention lifetime equivalent at junction temperature (TJ) = 125°C per JEDEC Standard 22, Method A117. Retention lifetime, based on an activation energy of 1 eV, derates

with junction temperature in the Flash/EE memory.

12 50 years applies to an endurance of 1000 cycles. An endurance of 100,000 cycles has an equivalent retention lifetime of 5 years.

ELECTRICAL CHARACTERISTICS—AD5141

VDD = 2.3 V to 5.5 V, VSS = 0 V; VDD = 2.25 V to 2.75 V, VSS = −2.25 V to −2.75 V; VLOGIC = 1.8 V to 5.5 V, −40°C < TA < +125°C, unless

otherwise noted.

Table 3.

Parameter

Symbol

Test Conditions/Comments

Min

Typ1

Max

Unit

DC CHARACTERISTICS—RHEOSTAT MODE (ALL

RDACs)

Resolution

N

8

Bits

Resistor Integral Nonlinearity2

R-INL

RAB = 10 kΩ

VDD ≥ 2.7 V

−2

±0.2

+2

LSB

VDD < 2.7 V

−5

±1.5

+5

LSB

RAB = 100 kΩ

VDD ≥ 2.7 V

−1

±0.1

+1

LSB

VDD < 2.7 V

−2

±0.5

+2

LSB

Resistor Differential Nonlinearity2

R-DNL

−0.5

±0.2

+0.5

LSB

Nominal Resistor Tolerance

ΔRAB/RAB

−8

±1

+8

%

Resistance Temperature Coefficient3

(ΔRAB/RAB)/ΔT × 106

Code = full scale

35

ppm/°C

Wiper Resistance3

RW

Code = zero scale

RAB = 10 kΩ

55

125

Ω

RAB = 100 kΩ

130

400

Ω

Bottom Scale or Top Scale

RBS or RTS

RAB = 10 kΩ

40

80

Ω

RAB = 100 kΩ

60

230

Ω

DC CHARACTERISTICS—POTENTIOMETER

DIVIDER MODE (ALL RDACs)

Integral Nonlinearity4

INL

RAB = 10 kΩ

−1

±0.2

+1

LSB

RAB = 100 kΩ

−0.5

±0.1

+0.5

LSB

Differential Nonlinearity4

DNL

−0.5

±0.2

+0.5

LSB

Full-Scale Error

VWFSE

RAB = 10 kΩ

−2.5

−0.1

LSB

RAB = 100 kΩ

−1

±0.2

+1

LSB