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VR5510 Datasheet(PDF) 39 Page - NXP Semiconductors |
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VR5510 Datasheet(HTML) 39 Page - NXP Semiconductors |
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39 / 200 page ![]() NXP Semiconductors VR5510 Multi-output PMIC with SMPS and LDO VR5510 Power Calculator tool to recalculate the theoretical efficiency. The real efficiency must be verified by measurement at the application level. Ext. C and L Cin 60 μF ESR Cin 10 mΩ Cout 44 μF ESR Cout 10 mΩ L coil 1 μH DCR coil 30 mΩ Int. MOSFET HS_Rdson 135 mΩ QH 0.5 nC THS_sw 5 ns GHS_drive 5 V LS-Rdson 80 mΩ QLS 0.5 nC TLS_sw 5 ns GLS_drive 5 V Ibuck3 (A) 0 2.75 2.0 1.0 BUCK3 Efficiency vs Ibuck3 1.25 0.25 0.5 0.75 2.25 2.5 1.50 1.75 aaa-039378 80 70 90 100 60 85 75 95 65 3.3 V 2.3 V 1.2 V Table 20. BUCK3 theoretical efficiency 14 Linear voltage regulator: LDO1 14.1 Functional description LDO1 is a medium voltage linear regulator. The output voltage is configurable from 1.1 V to 5 V by OTP through the LDO1V_OTP [2:0] bit field (CFG_ LDO_ ALL2_OTP register). A minimum voltage drop is required, depending on the output current capability (0.5 V for 150 mA and 1 V for 400 mA). The LDO current capability is linear with the voltage drop and can be estimated to I(mA) = 500 x VLDO1_DROP -100 for an intermediate voltage drop between 0.5 V and 1 V. Overcurrent detection and a thermal shutdown are implemented on LDO1 to protect the internal pass device. VR5510 All information provided in this document is subject to legal disclaimers. © 2024 NXP B.V. All rights reserved. Product data sheet Rev. 7.0 — 2 October 2024 Document feedback 39 / 200 |
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