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VR5510 Datasheet(PDF) 40 Page - NXP Semiconductors

Part # VR5510
Description  Multi-output PMIC with SMPS and LDO
PDF  200 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

VR5510 Datasheet(HTML) 40 Page - NXP Semiconductors

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NXP Semiconductors
VR5510
Multi-output PMIC with SMPS and LDO
14.2 Application schematics
aaa-039379
I2C
INTERFACE
VLDO1_EN
LDO1_IN
VLDO1
CIN_LDO1
COUT_LDO1
VLDO1_IN
discharge
VREF
VLDO1
Figure 20. LDO1 block diagram
14.3 Electrical characteristics
TA = –40 °C to 125 °C, unless otherwise specified. VSUP = VSUP_UVH to 36 V, unless otherwise specified. All
voltages referenced to ground. Typical values based on TA = 25 °C.
Symbol
Parameter
Min
Typ
Max
Unit
LDO1
VLDO1_IN
Input voltage range
2.5
—
6.5
V
VLDO1
Output voltage, OTP settings available:
1.1 V, 1.2 V, 1.6 V, 1.8 V, 2.5 V, 2.8 V, 3.3 V, 5.0 V
1.1
—
5.0
V
VLDO1_ACC
Output Voltage accuracy
-2
—
+2
%
VLDO1_DROP_150
Minimum Voltage drop for 150 mA current capability
0.5
—
—
V
VLDO1_DROP_400
Minimum Voltage drop for 400 mA current capability
1.0
—
—
V
ILDO1_Q
Quiescent Current, No load, VSUP = 12 V
—
40
—
μA
CIN_LDO1
Effective input capacitor (close to LDO1_IN pin)
0.5
—
—
μF
COUT_LDO1_150
Effective output capacitor, 150 mA current capability
3
—
100
μF
COUT_LDO1_400
Effective output capacitor, 400 mA current capability
4.5
—
100
μF
COUT_LDO1
Output decoupling capacitor
0.1
—
—
μF
VLDO1_LTR_150
Transient Load Regulation
(from 10 mA to 150 mA in 2 μs)
-4
—
+4
%
VLDO1_LTR_400
Transient Load Regulation
(from 10 mA to 400 mA in 4 μs)
-5
—
+5
%
VLDO1_LR
Line Regulation
—
—
0.5
%
VLDO1_ILIM_150
Current limitation, 150 mA current capability
180
280
500
mA
VLDO1_ILIM_400
Current limitation, 400 mA current capability
460
560
850
mA
Table 21. Electrical characteristics
VR5510
All information provided in this document is subject to legal disclaimers.
© 2024 NXP B.V. All rights reserved.
Product data sheet
Rev. 7.0 — 2 October 2024
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