ADS7846

2

SBAS125H

www.ti.com

ABSOLUTE MAXIMUM RATINGS(1)

+VCC to GND ........................................................................ –0.3V to +6V

Analog Inputs to GND ............................................ –0.3V to +VCC + 0.3V

Digital Inputs to GND ............................................. –0.3V to +VCC + 0.3V

Power Dissipation .......................................................................... 250mW

Maximum Junction Temperature ................................................... +150

°C

Operating Temperature Range ........................................ –40

°C to +85°C

Storage Temperature Range ......................................... –65

°C to +150°C

Lead Temperature (soldering, 10s) ............................................... +300

°C

NOTE: (1) Stresses above these ratings can cause permanent damage.

Exposure to absolute maximum conditions for extended periods may degrade

device reliability.

MAXIMUM

INTEGRAL

SPECIFIED

LINEARITY

PACKAGE

TEMPERATURE

PACKAGE

ORDERING

PRODUCT

ERROR (LSB)

PACKAGE-LEAD

DESIGNATOR

RANGE

MARKING

NUMBER

ADS7846E

±2

SSOP-16

DBQ

–40

°C to +85°C

ADS7846E

ADS7846E

""

"

"

"

"

ADS7846E/2K5

ADS7846N

±2

TSSOP-16

PW

–40

°C to +85°C

ADS7846N

ADS7846N

""

"

"

"

"

ADS7846N/2K5

""

"

"

"

"

ADS7846N/2K5G4

ADS7846I

±2

VFBGA-48

GQC

–40

°C to +85°C

ADS7846

ADS7846IGQCR

ADS7846I

±2

QFN-16

RGV

–40

°C to +85°C

ADS7846

ADS7846IRGVT

""

"

"

"

"

ADS7846IRGVR

NOTE: (1) For the most current package and ordering information, see the Package Option Addendum located at the end of this data sheet, or see the TI web site

at www.ti.com.

PACKAGE/ORDERING INFORMATION(1)

ELECTROSTATIC

DISCHARGE SENSITIVITY

This integrated circuit can be damaged by ESD. Texas Instru-

ments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling

and installation procedures can cause damage.

ESD damage can range from subtle performance degradation

to complete device failure. Precision integrated circuits may be

more susceptible to damage because very small parametric

changes could cause the device not to meet its published

specifications.