AD8178 datasheet(7/40 Pages) AD

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AD8178

Rev. 0 | Page 7 of 40

ABSOLUTE MAXIMUM RATINGS

Table 12.

Parameter

Rating

Analog Supply Voltage (VPOS – VNEG)

6 V

Digital Supply Voltage (VDD – DGND)

6 V

Ground Potential Difference

(VNEG – DGND)

+0.5 V to –2.5 V

Maximum Potential Difference

(VDD – VNEG)

8 V

Common-Mode Analog Input Voltage

(VNEG – 0.5 V) to

(VPOS + 0.5 V)

Differential Analog Input Voltage

±2 V

Digital Input Voltage

VDD

Output Voltage

(Disabled Analog Output)

(VPOS – 1 V) to (VNEG + 1 V)

Output Short-Circuit Duration

Momentary

Storage Temperature Range

−65°C to +125°C

Operating Temperature Range

−40°C to +85°C

Lead Temperature

(Soldering, 10 sec)

300°C

Junction Temperature

150°C

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

THERMAL RESISTANCE

is specified for the worst-case conditions, that is, a device

soldered in a circuit board for surface-mount packages.

Table 13. Thermal Resistance

Package Type

θJA

Unit

PBGA

°C/W

POWER DISSIPATION

The AD8178 is operated with ±2.5 V or +5 V supplies and can

drive loads down to 100 Ω, resulting in a large range of possible

power dissipations. For this reason, extra care must be taken

when derating the operating conditions based on ambient

temperature.

Packaged in a 676-lead BGA, the AD8178 junction-to-ambient

thermal impedance (θJA) is 15°C/W. For long-term reliability,

the maximum allowed junction temperature of the die should

not exceed 150°C. Temporarily exceeding this limit may cause

a shift in parametric performance due to a change in stresses

exerted on the die by the package. Exceeding a junction

temperature of 175°C for an extended period can result in

device failure. The curve in Figure 4 shows the range of allowed

internal die power dissipations that meet these conditions over

the −40°C to +85°C ambient temperature range. When using

Table 13, do not include external load power in the maximum

power calculation, but do include load current dropped on the

die output transistors.

AMBIENT TEMPERATURE (°C)

TJ = 150°C

Figure 4. Maximum Die Power Dissipation vs. Ambient Temperature

ESD CAUTION

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