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LT8640 Datasheet(PDF) 16 Page - Analog Devices

Part # LT8640
Description  42V, 6A Synchronous Step-Down Silent Switcher 2 with 2.5μA Quiescent Current
PDF  32 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

LT8640 Datasheet(HTML) 16 Page - Analog Devices

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LT8640S/LT8643S/
LT8640SA/LT8643SA
16
Rev. D
For more information www.analog.com
APPLICATIONS INFORMATION
GROUND VIA
VIN VIA
VOUT VIA
OTHER SIGNAL VIAS
8640S F01a
L
COPT2
CIN3
COPT1
CSS
R2
C1
R1
RT
COUT
GROUND VIA
VIN VIA
VOUT VIA
OTHER SIGNAL VIAS
8640S F01b
L
COPT2
CIN3
COPT1
CSS
R2
RC
CC
C1
R1
RT
COUT
CF
(a) LT8640S/LT8640SA
(b) LT8643S/LT8643SA
Figure 1. Recommended PCB Layouts for the LT8640S/LT8640SA and LT8643S/LT8643SA
Low EMI PCB Layout
The LT8640S/LT8643S/LT8640SA/LT8643SA is specifi-
cally designed to minimize EMI emissions and also to
maximize efficiency when switching at high frequen-
cies. For optimal performance the LT8640S/LT8643S/
LT8640SA/LT8643SA should use multiple VIN bypass
capacitors.
Two small <1µF capacitors can be placed as close as pos-
sible to the LT8640S/LT8643S/LT8640SA/LT8643SA, one
capacitor on each side of the device (COPT1, COPT2). A third
capacitor with a larger value, 2.2µF or higher, should be
placed near COPT1 or COPT2.
See Figure 1 for recommended PCB layouts.
For more detail and PCB design files refer to the Demo Board
guide for the LT8640S/LT8643S/LT8640SA/LT8643SA.
Note that large, switched currents flow in the LT8640S/
LT8643S/LT8640SA/LT8643SA VIN and GND pins and the
input capacitors. The loops formed by the input capacitors
should be as small as possible by placing the capacitors
adjacent to the VIN and GND pins. Capacitors with small
case size such as 0603 are optimal due to lowest parasitic
inductance.
The input capacitors, along with the inductor and out-
put capacitors, should be placed on the same side of the
circuit board, and their connections should be made on
that layer. Place a local, unbroken ground plane under the
application circuit on the layer closest to the surface layer.



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