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ISO5451 Datasheet(PDF) 28 Page - Texas Instruments

Part # ISO5451
Description  ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features
PDF  39 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

ISO5451 Datasheet(HTML) 28 Page - Texas Instruments

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VCC2
15 V
8 V
RG
OUT
ISO 5451 - Q1
ron-max
QG
VEE2
roff-max
Copyright © 2016, Texas Instruments Incorporated
(
)
on-max
off-max
OL-WC
INP
G
CC2
EE2
on-max
G
off-max
G
r
r
P
= 0.5
f
Q
V
V
+
r
+ R
r
+ R
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28
ISO5451-Q1
SLLSEQ3A – SEPTEMBER 2016 – REVISED DECEMBER 2016
www.ti.com
Product Folder Links: ISO5451-Q1
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
10.2.2.9 Determining the Maximum Available, Dynamic Output Power, POD-max
The ISO5451-Q1 maximum allowed total power consumption of PD = 251 mW consists of the total input power,
PID, the total output power, POD, and the output power under load, POL:
PD = PID + POD + POL
(1)
With:
PID = VCC1-max × ICC1-max = 5.5 V × 4.5 mA = 24.75 mW
(2)
and:
POD = (VCC2 – VEE2) × ICC2-max = (15V – ( –8V)) × 6 mA = 138 mW
(3)
then:
POL = PD – PID – POD = 251 mW – 24.75 mW – 138 mW = 88.25 mW
(4)
In comparison to POL, the actual dynamic output power under worst case condition, POL-WC, depends on a variety
of parameters:
where
•
fINP = signal frequency at the control input IN+
•
QG = power device gate charge
•
VCC2 = positive output supply with respect to GND2
•
VEE2 = negative output supply with respect to GND2
•
ron-max = worst case output resistance in the on-state: 4 Ω
•
roff-max = worst case output resistance in the off-state: 2.5 Ω
•
RG = gate resistor
(5)
Once RG is determined, Equation 5 is to be used to verify whether POL-WC < POL. Figure 50 shows a simplified
output stage model for calculating POL-WC.
Figure 50. Simplified Output Model for Calculating POL-WC
10.2.2.10 Example
This examples considers an IGBT drive with the following parameters:
ION-PK = 2 A, QG = 650 nC, fINP = 20 kHz, VCC2 = 15V, VEE2 = –8 V
(6)
Apply the value of the gate resistor RG = 10 Ω.



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