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ISO5451-Q1

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SLLSEQ3A – SEPTEMBER 2016 – REVISED DECEMBER 2016

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(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report (SPRA953).

7.4 Thermal Information

THERMAL METRIC(1)

ISO5451-Q1

UNIT

DW (SOIC)

16 PINS

RθJA

Junction-to-ambient thermal resistance

99.6

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

48.5

°C/W

RθJB

Junction-to-board thermal resistance

56.5

°C/W

ψJT

Junction-to-top characterization parameter

29.2

°C/W

ψJB

Junction-to-board characterization parameter

56.5

°C/W

(1)

Full chip power dissipation is de-rated 10.04 mW/°C beyond 25°C ambient temperature. At 125°C ambient temperature, a maximum of

251 mW total power dissipation is allowed. Power dissipation can be optimized depending on ambient temperature and board design,

while ensuring that Junction temperature does not exceed 150°C.

7.5 Power Ratings

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

PD

Maximum power dissipation(1)

1255

mW

PID

Maximum input power dissipation

175

mW

POD

Maximum output power dissipation

1080

mW