GND1

VEE2

RST

RDY

FLT

IN+

IN±

VCC1

VCC2

DESAT

GND2

OUT

CLAMP

VCC1

VCC1

UVLO1

Mute

Decoder

Q

S

R

Q

VCC1

VCC1

Gate Drive

and

Encoder

Logic

UVLO2

2 V

9 V

500 µA

VCC2

Ready

Fault

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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

ISO5451-Q1

SLLSEQ3A – SEPTEMBER 2016 – REVISED DECEMBER 2016

ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver

With Active Protection Features

1

1 Features

1

•

Qualified for Automotive Applications

•

AEC-Q100 Qualified With the Following Results:

–

Device Temperature Grade 1: –40°C to

+125°C Ambient Operating Temperature

Range

–

Device HBM Classification Level 3A

–

Device CDM Classification Level C6

•

50-kV/μs Minimum and 100-kV/μs Typical

Common-Mode Transient Immunity (CMTI)

at VCM = 1500 V

•

2.5-A Peak Source and 5-A Peak Sink Currents

•

Short Propagation Delay: 76 ns (Typ),

110 ns (Max)

•

2-A Active Miller Clamp

•

Output Short-Circuit Clamp

•

Fault Alarm upon Desaturation Detection is

Signaled on FLT and Reset Through RST

•

Input and Output Under Voltage Lock-Out (UVLO)

with Ready (RDY) Pin Indication

•

Active Output Pull-down and Default Low Outputs

with Low Supply or Floating Inputs

•

3-V to 5.5-V Input Supply Voltage

•

15-V to 30-V Output Driver Supply Voltage

•

CMOS Compatible Inputs

•

Rejects Input Pulses and Noise Transients

Shorter Than 20 ns

•

Isolation Surge Withstand Voltage 10000-VPK

•

Safety-Related Certifications:

–

8000-VPK VIOTM and 1420-VPK VIORM

Reinforced Isolation per DIN V VDE V 0884-10

(VDE V 0884-10):2006-12

–

5700-VRMS Isolation for 1 Minute per UL 1577

–

CSA Component Acceptance Notice 5A, IEC

60950–1 and IEC 60601–1 End Equipment

Standards

–

TUV Certification per EN 61010-1 and EN

60950-1

–

GB4943.1-2011 CQC Certification

–

All Certifications Complete per UL, VDE, CQC,

TUV and Planned for CSA

2 Applications

•

Isolated IGBT and MOSFET Drives in:

–

HEV and EV Power Modules

–

Industrial Motor Control Drives

–

Industrial Power Supplies

–

Solar Inverters

–

Induction Heating

3 Description

The ISO5451-Q1 is a 5.7-kVRMS, reinforced isolated

gate driver for IGBTs and MOSFETs with 2.5-A

source and 5-A sink current. The input side operates

from a single 3-V to 5.5-V supply. The output side

allows for a supply range from minimum 15 V to

maximum 30 V. Two complementary CMOS inputs

control the output state of the gate driver. The short

propagation time of 76 ns assures accurate control of

the output stage.

An internal desaturation (DESAT) fault detection

recognizes

when

the

IGBT

is

in

an

overload

condition. Upon a DESAT detect, the gate driver

output is driven low to VEE2 potential, turning the

IGBT immediately off.

Device Information(1)

PART NUMBER

PACKAGE

BODY SIZE (NOM)

ISO5451-Q1

SOIC (16)

10.30 mm × 7.50 mm

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

Functional Block Diagram