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ISO5451 Datasheet(PDF) 6 Page - Texas Instruments

Part # ISO5451
Description  ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features
PDF  39 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

ISO5451 Datasheet(HTML) 6 Page - Texas Instruments

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ISO5451-Q1
SLLSEQ3A – SEPTEMBER 2016 – REVISED DECEMBER 2016
www.ti.com
Product Folder Links: ISO5451-Q1
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
(1)
Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application. Care
should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on
the printed-circuit board do not reduce this distance. Creepage and clearance on a printed-circuit board become equal in certain cases.
Techniques such as inserting grooves and/or ribs on a printed circuit board are used to help increase these specifications.
(2)
This coupler is suitable for basic electrical insulation only within the maximum operating ratings. Compliance with the safety ratings shall
be ensured by means of suitable protective circuits.
(3)
Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
(4)
Apparent charge is electrical discharge caused by a partial discharge (pd).
(5)
All pins on each side of the barrier tied together creating a two-terminal device
7.6 Insulation Characteristics
PARAMETER
TEST CONDITIONS
SPECIFICATION
UNIT
CLR
External clearance(1)
Shortest terminal-to-terminal distance through air
>8
mm
CPG
External creepage(1)
Shortest terminal-to-terminal distance across the
package surface
>8
mm
DTI
Distance through the insulation
Minimum internal gap (internal clearance)
>21
μm
CTI
Tracking resistance (comparative tracking
index)
DIN EN 60112 (VDE 0303-11); IEC 60112;
>600
V
Material Group
According to IEC 60664-1; UL 746A
I
Overvoltage category (according to IEC
60664-1)
Rated Mains Voltage
≤ 300 VRMS
I-IV
Rated Mains Voltage
≤ 600 VRMS
I-III
Rated Mains Voltage
≤ 1000 VRMS
I-II
DIN V VDE V 0884-10 (VDE V 0884-10):2006-12(2)
VIORM
Maximum repetitive peak isolation voltage
AC voltage (bipolar)
1420
VPK
VIOWM Maximum isolation working voltage
AC voltage. Time dependent dielectric breakdown
(TDDB) Test, see Figure 1
1000
VRMS
DC voltage
1420
VDC
VIOTM
Maximum Transient isolation voltage
VTEST = VIOTM, t = 60 sec (qualification), t = 1 sec
(100% production)
8000
VPK
VIOSM
Maximum surge isolation voltage(3)
Test method per IEC 60065, 1.2/50 μs waveform,
VTEST = 1.6 × VIOSM = 10000 VPK (qualification)
(3)
6250
qpd
Apparent charge(4)
Method a: After I/O safety test subgroup 2/3,
Vini = VIOTM, tini = 60 s;
Vpd(m) = 1.2 × VIORM = 1704 VPK ,
tm = 10 s
≤5
pC
Method a: After environmental tests subgroup 1,
Vini = VIOTM, tini = 60 s;
Vpd(m) = 1.6 × VIORM = 2272 VPK ,
tm = 10 s
≤5
Method b1: At routine test (100% production) and
preconditioning (type test)
Vini = VIOTM, tini = 60 s;
Vpd(m) = 1.875 × VIORM = 2663 VPK ,
tm = 10 s
≤5
RIO
Isolation resistance, input to output(5)
VIO = 500 V, TA = 25°C
> 1012
Ω
VIO = 500 V, 100°C ≤ TA ≤ 125°C
> 1011
Ω
VIO = 500 V at TS = 150°C
> 109
Ω
CIO
Barrier capacitance, input to output(5)
VIO = 0.4 × sin (2πft), f = 1 MHz
1
pF
Pollution degree
2
UL 1577
VISO
Withstanding Isolation voltage
VTEST = VISO, t = 60 sec (qualification),
VTEST = 1.2 × VISO = 6840 VRMS,
t = 1 sec (100% production)
5700
VRMS



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