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DLPR410 Datasheet(PDF) 9 Page - Texas Instruments

Part # DLPR410
Description  DLP650LNIR 0.65 NIR WXGA S450 DMD
PDF  53 Pages
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Manufacturer  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
Logo TI2 - Texas Instruments

DLPR410 Datasheet(HTML) 9 Page - Texas Instruments

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9
DLP650LNIR
www.ti.com
DLPS136 – NOVEMBER 2018
Product Folder Links: DLP650LNIR
Submit Documentation Feedback
Copyright © 2018, Texas Instruments Incorporated
(1)
The average over time (including storage and operating) that the device is not in the elevated dew point temperature range.
(2)
Limit exposure to dew point temperatures in the elevated range during storage and operation to less than a total cumulative time of
CTELR.
6.2 Storage Conditions
Applicable for the DMD as a component or non-operating in a system.
MIN
MAX
UNIT
TDMD
DMD storage temperature
–40
80
°C
TDP-AVG
Average dew point temperature (non-condensing) (1)
28
°C
TDP-ELR
Elevated dew point temperature range (non-condensing) (2)
28
36
°C
CTELR
Cumulative time in elevated dew point temperature range
24
Months
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
6.3 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic
discharge
Human-body model (HBM), per
ANSI/ESDA/JEDEC JS-001(1)
All pins except MBRST(15:0)
±2000
V
Pins MBRST(15:0)
< 250
(1)
All voltages are referenced to VSS (common ground). VCC, VCCI, VCC2, and VMBRST power supplies are all required for proper DMD
operation. VSS must also be connected to common ground.
(2)
VCC2 supply transients must fall within specified max voltages.
(3)
To prevent excess current, the supply voltage delta |VCCI – VCC| must be less than the specified limit.
(4)
PWRDNZ input pin resets the SCP and disables the LVDS receivers. PWRDNZ input pin overrides SCPENZ input pin and tri-states the
SCPDO output pin.
(5)
The SCP clock is a gated clock. Duty cycle must be 50% ± 10%. SCP parameter is related to the frequency of DCLK.
(6)
See Figure 3.
6.4 Recommended Operating Conditions
Over operating free-air temperature range (unless otherwise noted). The functional performance of the device specified in this
data sheet is achieved when operating the device within the limits defined by this table. No level of performance is implied
when operating the device above or below these limits.
MIN NOM
MAX
UNIT
VOLTAGE SUPPLY
VCC
Supply voltage for LVCMOS core logic(1)
3.0
3.3
3.6
V
VCCI
Supply voltage for LVDS Interface (1)
3.0
3.3
3.6
V
VCC2
Micromirror Electrode and HVCMOS voltage(1)(2)
8.25
8.5
8.75
V
VMBRST
Micromirror Bias / Reset Voltage(1)
–27
26.5
V
|VCC – VCCI|
Supply voltage delta (absolute value)(3)
0
0.3
V
LVCMOS INTERFACE
VIH
Input High Voltage
1.7
2.5
VCC + 0.3
V
VIL
Input Low Voltage
–0.3
0.7
V
IOH
High Level Output Current
–20
mA
IOL
Low Level Output Current
15
mA
tPWRDNZ
PWRDNZ pulse width(4)
10
ns
SCP INTERFACE
ƒSCPCLK
SCP clock frequency(5)
50
500
kHz
tSCP_PD
Propagation delay, clock to Q, from rising-edge of SCPCLK to
valid SCPDO.(6)
0
900
ns
tSCP_DS
SCPDI clock setup time (before SCPCLK falling-edge) (6)
800
ns
tSCP_DH
SCPDI hold time (after SCPCLK falling-edge)(6)
900
ns
tSCP_NEG_ENZ
Time between falling–edge of SCPENZ and the rising–edge of
SCPCLK.(5)
1
us
SCP_POS_ENZ
Time between falling-edge of SCPCLK and the rising–edge of
SCPENZ
1
us
tSCP_OUT_EN
Time required for SCP output buffer to recover after SCPENZ
(from tri-state).
192/ƒDCLK
s



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