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DLPR410 Datasheet(PDF) 9 Page - Texas Instruments |
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DLPR410 Datasheet(HTML) 9 Page - Texas Instruments |
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9 / 53 page ![]() 9 DLP650LNIR www.ti.com DLPS136 – NOVEMBER 2018 Product Folder Links: DLP650LNIR Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated (1) The average over time (including storage and operating) that the device is not in the elevated dew point temperature range. (2) Limit exposure to dew point temperatures in the elevated range during storage and operation to less than a total cumulative time of CTELR. 6.2 Storage Conditions Applicable for the DMD as a component or non-operating in a system. MIN MAX UNIT TDMD DMD storage temperature –40 80 °C TDP-AVG Average dew point temperature (non-condensing) (1) 28 °C TDP-ELR Elevated dew point temperature range (non-condensing) (2) 28 36 °C CTELR Cumulative time in elevated dew point temperature range 24 Months (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. 6.3 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) All pins except MBRST(15:0) ±2000 V Pins MBRST(15:0) < 250 (1) All voltages are referenced to VSS (common ground). VCC, VCCI, VCC2, and VMBRST power supplies are all required for proper DMD operation. VSS must also be connected to common ground. (2) VCC2 supply transients must fall within specified max voltages. (3) To prevent excess current, the supply voltage delta |VCCI – VCC| must be less than the specified limit. (4) PWRDNZ input pin resets the SCP and disables the LVDS receivers. PWRDNZ input pin overrides SCPENZ input pin and tri-states the SCPDO output pin. (5) The SCP clock is a gated clock. Duty cycle must be 50% ± 10%. SCP parameter is related to the frequency of DCLK. (6) See Figure 3. 6.4 Recommended Operating Conditions Over operating free-air temperature range (unless otherwise noted). The functional performance of the device specified in this data sheet is achieved when operating the device within the limits defined by this table. No level of performance is implied when operating the device above or below these limits. MIN NOM MAX UNIT VOLTAGE SUPPLY VCC Supply voltage for LVCMOS core logic(1) 3.0 3.3 3.6 V VCCI Supply voltage for LVDS Interface (1) 3.0 3.3 3.6 V VCC2 Micromirror Electrode and HVCMOS voltage(1)(2) 8.25 8.5 8.75 V VMBRST Micromirror Bias / Reset Voltage(1) –27 26.5 V |VCC – VCCI| Supply voltage delta (absolute value)(3) 0 0.3 V LVCMOS INTERFACE VIH Input High Voltage 1.7 2.5 VCC + 0.3 V VIL Input Low Voltage –0.3 0.7 V IOH High Level Output Current –20 mA IOL Low Level Output Current 15 mA tPWRDNZ PWRDNZ pulse width(4) 10 ns SCP INTERFACE ƒSCPCLK SCP clock frequency(5) 50 500 kHz tSCP_PD Propagation delay, clock to Q, from rising-edge of SCPCLK to valid SCPDO.(6) 0 900 ns tSCP_DS SCPDI clock setup time (before SCPCLK falling-edge) (6) 800 ns tSCP_DH SCPDI hold time (after SCPCLK falling-edge)(6) 900 ns tSCP_NEG_ENZ Time between falling–edge of SCPENZ and the rising–edge of SCPCLK.(5) 1 us SCP_POS_ENZ Time between falling-edge of SCPCLK and the rising–edge of SCPENZ 1 us tSCP_OUT_EN Time required for SCP output buffer to recover after SCPENZ (from tri-state). 192/ƒDCLK s |
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