5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

VALUE

Supply voltage 

VDD – GND

6.5V max

ESD tolerance (2)   

Human body model

2kV

Machine model

200V

Storage temperature

−65°C to +150°C

Junction temperature (3)

150°C max

Mounting temperature

Infrared or convection (20s)

235°C

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device can occur. Recommended Operating Conditions

indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For specifications and the

test conditions, see the Section 5.3.

(2)

Human body model: 1.5kΩ in series with 100pF.

(3)

The maximum power dissipation is a function of TJ(MAX), θJA and TA. The maximum allowable power dissipation at any ambient

temperature is PD = (TJ(MAX) – TA) / θJA. All numbers apply for packages soldered directly into a printed circuit board (PCB).

5.2 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(1)

VALUE

Supply voltage

2.6V to 5.5V

Operating temperature

−40°C to +85°C

VRAMP voltage

0V to 2V

RF frequency

450MHz to 2GHz

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device can occur. Recommended Operating Conditions

indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For specifications and the

test conditions, see the Section 5.3.

5.3 Electrical Characteristics for 2.6V

all limits specified to TJ = 25°C and VDD = 2.6V (unless otherwise noted); boldface limits apply at temperature extremes (1)

PARAMETER

CONDITION

MIN

TYP

MAX

UNITS

IDD

Supply current

VOUT = (VDD – GND) / 2

6.9

9

12

mA

In shutdown (TX_EN = 0V)

VOUT = (VDD – GND) / 2

0.2

30

µA

VHIGH

Logic level to enable power

See (2)

1.8

V

VLOW

Logic level to disable power

See (2)

0.8

V

TON

Turn-on time from shutdown

3.6

6

μs

IEN, IBS

Current into TX_EN and BS pin

0.03

5

µA

RAMP AMPLIFIER

VRD

VRAMP deadband

155

206

265

mV

1/RRAMP

Transconductance

See(3)

70

96

120

µA/V

IOUT RAMP

Ramp amplifier output current

VRAMP = 2V

100

162

µA

RF INPUT

PIN

RF input power range (4)

20kΩ || 68pF between COMP1 and COMP2

−50

0

dBm

−63

−13

dBV

LMV242, LMV2421

SNWS014D – MARCH 2004 – REVISED JUNE 2025

www.ti.com

4

Submit Document Feedback

Copyright © 2025 Texas Instruments Incorporated

Product Folder Links: LMV242 LMV2421