5.3 Electrical Characteristics for 2.6V (continued)

all limits specified to TJ = 25°C and VDD = 2.6V (unless otherwise noted); boldface limits apply at temperature extremes (1)

PARAMETER

CONDITION

MIN

TYP

MAX

UNITS

Logarithmic slope (5)

At 900MHz, 20kΩ || 68pF between COMP1

and COMP2

−1.74

µA/dB

At 1800MHz, 20kΩ || 68pF between COMP1

and COMP2

−1.62

At 1900MHz, 20kΩ || 68pF between COMP1

and COMP2

−1.60

At 2000MHz, 20kΩ || 68pF between COMP1

and COMP2

−1.59

Logarithmic intercept (5)

At 900MHz, 20kΩ || 68pF between COMP1

and COMP2

–50.4

dBm

At 1800MHz, 20kΩ || 68pF if between

COMP1 and COMP2

–52.3

At 1900MHz, 20kΩ || 68pF between COMP1

and COMP2

–51.9

At 2000MHz, 20kΩ || 68pF between COMP1

and COMP2

–52.3

RIN

DC resistance

See (3)

55.7

Ω

ERROR AMPLIFIER

GBW

Gain-bandwidth product

See (3)

5.1

MHz

VO

Output swing from rail

From positive rail, sourcing,

IO = 7mA

47

90

115

mV

From negative rail sinking,

IO = −7mA

52

90

115

IO

Output short-circuit current (6)

Sourcing, VO = 2.4V

10

29.5

mA

Sinking, VO = 0.2V

10

27.1

en

Output-referred noise

fMEASURE = 10kHz,

RF input = 1800MHz, –10dBm, 20kΩ || 68pF

between COMP1 and COMP2, VOUT =1.4V,

set by VRAMP (3)

700

nV/√Hz

SR

Slew rate

2.1

4.4

V/μs

(1)

Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very

limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables

under conditions of internal self-heating where TJ > TA.

(2)

All limits are specified by design or statistical analysis.

(3)

Typical values represent the most likely parametric norm.

(4)

Power in dBV = dBm + 13 when the impedance is 50Ω.

(5)

Slope and intercept calculated from graphs VOUT vs RF input power where the current is obtained by division of the voltage by 20kΩ.

(6)

The output is not short-circuit protected internally. External protection is necessary to prevent overheating and destruction or adverse

reliability.

5.4 Electrical Characteristics for 5V

all limits specified to TJ = 25°C and VDD = 5V (unless otherwise noted); boldface limits apply at temperature extremes (1).

SYMBOL

PARAMETER

CONDITION

MIN

TYP

MAX

UNITS

IDD

Supply current

VOUT = (VDD – GND) / 2

7.8

12

15

mA

In Shutdown (TX_EN = 0V)

VOUT = (VDD – GND) / 2

0.4

30

µA

VHIGH

Logic level to enable power

See (2)

1.8

V

VLOW

Logic level to disable power

See (2)

0.8

V

TON

Turn-on-time from shutdown

1.5

6

μs

IEN, IBS

Current into TX_EN and BS pin

0.03

5

µA

RAMP AMPLIFIER

VRD

VRAMP deadband

155

206

265

mV

1/RRAMP

Transconductance

See (3)

70

96

120

µA/V

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SNWS014D – MARCH 2004 – REVISED JUNE 2025

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