INA181 datasheet(8/62 Pages) TI2

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6.5 Electrical Characteristics

at TA = 25°C, VS = 5 V, VREF = VS / 2, VIN+ = 12 V, and VSENSE = VIN+ – VIN– (unless otherwise noted)

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

INPUT

CMRR

Common-mode rejection ratio, RTI (1)

VIN+ = 0 V to 26 V, VSENSE = 0 mV,

TA = –40°C to +125°C

100

VOS

Offset voltage, RTI

VSENSE = 0 mV, VIN+ = 0 V

±25

±150

μV

VSENSE = 0 mV

±100

±500

μV

dVOS/dT

Offset drift, RTI

VSENSE = 0 mV, TA = –40°C to +125°C

0.2

μV/°C

PSRR

RTI vs power supply ratio

VS = 2.7 V to 5.5 V, VIN+ = 12 V,

VSENSE = 0 mV

±8

±40

μV/V

IIB

Input bias current

VSENSE = 0 mV, VIN+ = 0 V

-6

μA

VSENSE = 0 mV

μA

IIO

Input offset current

VSENSE = 0 mV

±0.05

μA

OUTPUT

Gain

A1 devices

V/V

A2 devices

V/V

A3 devices

100

V/V

A4 devices

200

V/V

Gain error

VOUT = 0.5 V to VS – 0.5 V,

TA = –40°C to +125°C

±0.1%

±1%

Gain error vs temperature

TA = –40°C to +125°C

1.5

ppm/°C

Nonlinearity error

VOUT = 0.5 V to VS – 0.5 V

±0.01%

Maximum capacitive load

No sustained oscillation

VOLTAGE OUTPUT (2)

VSP

Swing to VS power-supply rail (3)

RL = 10 kΩ to GND, TA = –40°C to

+125°C

(VS) – 0.02

(VS) – 0.03

VSN

Swing to GND (3)

RL = 10 kΩ to GND, TA = –40°C to

+125°C

(VGND) +

0.0005

(VGND) +

0.005

FREQUENCY RESPONSE

Bandwidth

A1 devices, CLOAD = 10 pF

350

kHz

A2 devices, CLOAD = 10 pF

210

kHz

A3 devices, CLOAD = 10 pF

150

kHz

A4 devices, CLOAD = 10 pF

105

kHz

Slew rate

V/μs

NOISE, RTI (1)

Voltage noise density

nV/√Hz

POWER SUPPLY

Quiescent current

INA181

VSENSE = 0 mV

195

260

μA

VSENSE = 0 mV, TA = –40°C to +125°C

300

INA2181

VSENSE = 0 mV

356

500

μA

VSENSE = 0 mV, TA = –40°C to +125°C

520

INA4181

VSENSE = 0 mV

690

900

μA

VSENSE = 0 mV, TA = –40°C to +125°C

1000

(1)

RTI = referred-to-input.

(2)

See Output Voltage Swing vs Output Current

(3)

Swing specifications are tested with an overdriven input condition.

INA181, INA2181, INA4181

SBOS793H – APRIL 2017 – REVISED NOVEMBER 2023

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