5 Specifications

5.1 Absolute Maximum Ratings

See (1)

PARAMETER

MIN

MAX

UNIT

VM to PGND (test for 24hrs)

0

100

V

VM to PGND (up to 10,000 5ms pulses at 150°C)

120

V

BOOT to AGND

106

V

HS to AGND

100

V

HS to PGND (up to 10,000 5ms pulses at 150°C)

120

V

HI to AGND

-0.3

6

V

LI to AGND

-0.3

6

V

HI to AGND, 20ns transients, < 1Mhz frequency

-2

6

V

LI to AGND, 20ns transients, < 1Mhz frequency

-2

6

V

GVDD to AGND

-0.3

6

V

BOOT to HS

-0.3

6

V

BOOT to GVDD

0

100

V

OUT to PGND

100

V

IOUT from OUT pin (Continuous), TJ = 125℃

70

A

IOUT from OUT pin (Pulsed, 300 µs), TJ = 25℃

250

A

Junction Temperature, TJ

-40

175

°C

Storage Temperature, Tstg

-40

175

°C

(1)

Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.

If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully

functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

5.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic Discharge

Human-body model (HBM), per ANSI/ESDA/

JEDEC JS-001(1)

±1000

V

V

Charged-device model (CDM), corner pins, per

JEDEC specification JESD22-C101(2)

±750

V

Charged-device model (CDM), internal pins, per

JEDEC specification JESD22-C101(2)

±500

V

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

DRV7167

SLVSJF0 – OCTOBER 2025

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