6 Parameter Measurement Information

6.1 Propagation Delay and Mismatch Measurement

Figure 6-1 shows the typical test setup used to measure the propagation mismatch. As the gate drives are not

accessible, pullup and pulldown resistors in this test circuit are used to indicate when the low-side GaN FET

turns ON and the high-side GaN FET turns OFF and vice versa to measure the tMON and tMOFF parameters.

Resistance values used in this circuit for the pullup and pulldown resistors are in the order of 1 kΩ; the current

sources used are 2 A.

Figure 6-2 through Figure 6-5 show propagation delay measurement waveforms. For turnon propagation delay

measurements, the current sources are not used. For turnoff time measurements, the current sources are set to

2 A, and a voltage clamp limit is also set, referred to as VM(CLAMP). When measuring the high-side component

turnoff delay, the current source across the high-side FET is turned on, the current source across the low-side

FET is off, HI transitions from high-to-low, and output voltage transitions from VM to VM(CLAMP). Similarly, for

low-side component turnoff propagation delay measurements, the high-side component current source is turned

off, and the low-side component current source is turned on, LI transitions from high to low and the output

transitions from GND potential to VM(CLAMP). The time between the transition of LI and the output change is the

propagation delay time.

OUT

PGND

VM

HI

LI

HS

BOOT

GVDD

AGND

DRV716x

Pattern

Generator

VOUT

Delay Measurement

Figure 6-1. Propagation Delay and Propagation Mismatch Measurement

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