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LM5145 Datasheet(PDF) 60 Page - Texas Instruments |
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LM5145 Datasheet(HTML) 60 Page - Texas Instruments |
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60 / 74 page ![]() • Create an analog ground plane near the IC for sensitive analog components. Connect the AGND plane and the PGND power ground planes at a single point at the die attach pad (DAP) of the IC. • Increase the width of the BIAS1/VOUT1 trace to minimize the voltage offset related to VCC bias current, as shown in Figure 8-33. Place four paralleled 0603 capacitors close the drain of the high-side FET and connect with vias to the GND plane on layer 2 Locate the output capacitors (1210 footprint) close to the inductor Optional RC sense network for inductor DCR current sensing Shunt resistor for current sensing with centrally placed sense vias High-frequency switching current loop with reduced effective area for lowest power-loop parasitic inductance Use large copper area for heatsinking of the high-side FET VIN VOUT SW PGND Output capacitors (1210) Shunt (1225) Low-side FET (5 6mm) High-side FET (5 6mm) G S G S Inductor Input capacitors (0603) Input capacitors (1210) Keep the switch-node copper area as small as possible Place a pair of 1210 input capacitors (C35, C37) on each side of the FET in a butterfly layout for field cancellation Place the inductor close to the FETs and use a cutout of the copper underneath to avoid parasitic coupling paths Figure 8-31. Power Stage Component Layout High-side MOSFET 0603 input capacitors SW VIN GND GND 0.3mm vias L1 L2 L3 L4 Tightly-coupled return path minimizes power-loop impedance 0.15mm L5 L6 Low-side MOSFET See the Improve High-current DC/DC Regulator Performance for Free with Optimized Power Stage Layout application brief for more detail. Figure 8-32. PCB Stack-Up Diagram With Low L1-L2 Intra-layer Spacing LM5137 SNVSCU3 – OCTOBER 2025 www.ti.com 60 Submit Document Feedback Copyright © 2025 Texas Instruments Incorporated Product Folder Links: LM5137 |
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