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M58LW064 Datasheet(PDF) 39 Page - STMicroelectronics |
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M58LW064 Datasheet(HTML) 39 Page - STMicroelectronics |
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39 / 53 page ![]() 39/53 M58LW064A, M58LW064B Table 27. Reset, Power-down and Power-up (TA = 0 to 70°C, –40 to 85°C, VDD = 2.7V to 3.6V, VDD = 1.8V to VDD) Table 28. Program, Erase Times and Program Erase Endurance Cycles (TA = 0 to 70°C; VDD = 2.7V to 3.6V; VDDQ =1.7V to 1.9V) Symbol Parameter Min Max Unit tPHEL Reset/Power-down High to Chip Enable Low 50 µs tPHQV Reset/Power-down High to Output Valid 10 µs tPHWL Reset/Power-down High to Write Enable Low 50 µs tPLPH Reset/Power-down Low to Reset/Power-down High 500 ns tPLRH Reset/Power-down Low to Ready High 22 µs tPUR Power-up to Read 10 µs tPUW Power-up to Write 10 µs tVDHEL Supply Voltages High to Chip Enable low 50 ms tVDHPH Supply Voltages High to Reset/Power-down High 1 µs tVDHWL Supply Voltages High to Write Enable Low 50 ms Parameters M58LW064A/B Unit Min Max Typ Typical after 100k W/E Cycles Uniform Block (1Mb) Erase 1.5 0.75 0.75 sec Chip Program 54 54 sec Write Buffer 192 192 µs Program Suspend Latency Time 10 3 µs Erase Suspend Latency Time 30 10 µs Program/Erase Cycles (per Block) 100,000 cycles |
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